KSC5327 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KSC5327
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 60 W
Tensión colector-base (Vcb): 1200 V
Tensión colector-emisor (Vce): 800 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 3.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 12 MHz
Capacitancia de salida (Cc): 50 pF
Ganancia de corriente contínua (hFE): 10
Encapsulados: TO220
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KSC5327 datasheet
ksc5321f.pdf
NPN TRIPLE DIFFUSED KSC5321F PLANAR SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY TO-220F High speed Switching Wide Safe Operating Area ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage VCBO 800 V Collector Emitter Voltage VCEO 500 V Emitter Base Voltage VEBO 7 V Collector Current DC IC 5 A Pulse ICP 10 Base Current DC IB 2 A Pu
ksc5321.pdf
NPN TRIPLE DIFFUSED KSC5321 PLANAR SILICON TRANSISTOR HIGH VOLTAGE AND HIGH RELIABILITY TO-220 High speed Switching Wide Safe Operating Area ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage VCBO 800 V Collector Emitter Voltage VCEO 500 V Emitter Base Voltage VEBO 7 V Collector Current DC IC 5 A Pulse ICP 10 Base Current DC IB 2 A 1.Ba
ksc5321.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSC5321 DESCRIPTION Collector-Emitter Breakdown Voltage- V(BR) CEO= 500V(Min) High Switching Speed Wide Area of Safe Operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collec
Otros transistores... KSC5060, KSC5061, KSC5086, KSC5088, KSC5089, KSC5321, KSC5321F, KSC5326, 2SC945, KSC5328, KSC5337, KSC5337F, KSC5338, KSC5338F, KSC5367, KSC5367F, KSC815
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