KSC5327 Datasheet, Equivalent, Cross Reference Search
Type Designator: KSC5327
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 60 W
Maximum Collector-Base Voltage |Vcb|: 1200 V
Maximum Collector-Emitter Voltage |Vce|: 800 V
Maximum Emitter-Base Voltage |Veb|: 7 V
Maximum Collector Current |Ic max|: 3.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 12 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 10
Noise Figure, dB: -
Package: TO220
KSC5327 Transistor Equivalent Substitute - Cross-Reference Search
KSC5327 Datasheet (PDF)
ksc5321f.pdf
NPN TRIPLE DIFFUSEDKSC5321F PLANAR SILICON TRANSISTORHIGH VOLTAGE AND HIGH RELIABILITYTO-220F High speed Switching Wide Safe Operating AreaABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector Base Voltage VCBO 800 V Collector Emitter Voltage VCEO 500 V Emitter Base Voltage VEBO 7 V Collector Current DC IC 5 APulse ICP 10 Base Current DC IB 2 APu
ksc5321.pdf
NPN TRIPLE DIFFUSEDKSC5321 PLANAR SILICON TRANSISTORHIGH VOLTAGE AND HIGH RELIABILITYTO-220 High speed Switching Wide Safe Operating AreaABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector Base Voltage VCBO 800 V Collector Emitter Voltage VCEO 500 V Emitter Base Voltage VEBO 7 V Collector Current DC IC 5 APulse ICP 10 Base Current DC IB 2 A1.Ba
ksc5321.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSC5321 DESCRIPTION Collector-Emitter Breakdown Voltage- : V(BR) CEO= 500V(Min) High Switching Speed Wide Area of Safe Operation APPLICATIONS Designed for switching regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collec
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
