KSD1621S
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KSD1621S
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.5
W
Tensión colector-base (Vcb): 30
V
Tensión colector-emisor (Vce): 25
V
Tensión emisor-base (Veb): 6
V
Corriente del colector DC máxima (Ic): 2
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 150
MHz
Capacitancia de salida (Cc): 19
pF
Ganancia de corriente contínua (hfe): 140
Paquete / Cubierta:
SOT89
Búsqueda de reemplazo de transistor bipolar KSD1621S
KSD1621S
Datasheet (PDF)
7.1. Size:115K fairchild semi
ksd1621.pdf 
August 2009KSD1621NPN Epitaxial Silicon TransistorFeatures High Current Driver Applications Low Collector-Emitter Saturation Voltage Large Current Capacity and Wide SOA Fast Switching Speed Complement to KSB1121Marking1 6 2 1P Y W WSOT-891Weekly code1. Base 2. Collector 3. EmitterYear codehFE gradeAbsolute Maximum Ratings TA = 25C unless othe
9.1. Size:47K fairchild semi
ksd1691.pdf
KSD1691Feature Low Collector-Emtter Saturation Voltage & Large Collector Current High Power Dissipation: PC = 1.3W (Ta=25C) Complementary to KSB1151TO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Volta
9.2. Size:242K fairchild semi
ksd1616a.pdf
November 2007KSD1616/1616AAudio Frequency Power Amplifier & Medium Speed Switching Complement to KSB1116/1116ATO-9211. Emitter 2. Collector 3. BaseAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage : KSD1616 60 V: KSD1616A 120 VVCEO Collector-Emitter Voltage : KSD1616 50 V: KSD1616A 60 VVEBO Emitter-Bas
9.3. Size:54K fairchild semi
ksd1616.pdf
KSD1616/1616AAudio Frequency Power Amplifier & Medium Speed Switching Complement to KSB1116/1116ATO-9211. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage : KSD1616 60 V : KSD1616A 120 VVCEO Collector-Emitter Voltage : KSD1616 50 V : KSD1616A
9.4. Size:50K fairchild semi
ksd1692.pdf
KSD1692Feature High Dc Durrent Gain Low Collector Saturation Voltage Built-in a Damper Diode at E-C High Power Dissipation : PC = 1.3W (Ta=25C)TO-12611. Emitter 2.Collector 3.BaseNPN Silicon Darlington TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSym-Parameter Value Unitsbol VCBO Collector-Base Voltage 150 V VCEO Collector-Emitt
9.5. Size:238K mcc
ksd1616a-g-y.pdf
MCCKSD1616-Y/G/LTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311KSD1616A-Y/GPhone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)NPN Silicon Audio frequency power amplifier & medium speed switching Epoxy meets UL 94 V-
9.6. Size:238K mcc
ksd1616-g-l-y.pdf
MCCKSD1616-Y/G/LTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311KSD1616A-Y/GPhone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)NPN Silicon Audio frequency power amplifier & medium speed switching Epoxy meets UL 94 V-
9.7. Size:164K onsemi
ksd1691.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
9.8. Size:318K onsemi
ksd1616a.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
9.9. Size:205K lge
ksd1691.pdf
KSD1691(NPN) TO-126 TransistorTO-1261. EMITTER 2. COLLECTOR 3. BASE 3 21 Features Low Collector-Emitter Saturation Voltage & Large Collector Current High Power Dissipation: PC = 1.3W (Ta=25C) 2.5007.4002.9001.1007.8001.5003.9003.0004.100MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)3.20010.6000.0
9.10. Size:186K lge
ksd1691 to-126c.pdf
KSD1691 TO-126C Transistor (NPN)TO-126C1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 Features Low Collector-Emitter Saturation Voltage & Large Collector Current High Power Dissipation: PC = 1.3W (Ta=25C) 3.0007.8003.4008.200 1.800MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)2.2004.0404.240Symbol Parameter Value Uni
9.11. Size:808K blue-rocket-elect
ksd1616 ksd1616a.pdf
KSD1616(A) Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features KSB1116(A)Complementary pair with KSB1116(A) / Applications ,Audio frequency power amplifier, medium speed switching. / Equ
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