KSD1692O Todos los transistores

KSD1692 Feature High Dc Durrent Gain Low Collector Saturation Voltage Built-in a Damper Diode at E-C High Power Dissipation PC = 1.3W (Ta=25 C) TO-126 1 1. Emitter 2.Collector 3.Base NPN Silicon Darlington Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Sym- Parameter Value Units bol VCBO Collector-Base Voltage 150 V VCEO Collector-Emitt

KSD1691 Feature Low Collector-Emtter Saturation Voltage & Large Collector Current High Power Dissipation PC = 1.3W (Ta=25 C) Complementary to KSB1151 TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Volta

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

KSD1691(NPN) TO-126 Transistor TO-126 1. EMITTER 2. COLLECTOR 3. BASE 3 2 1 Features Low Collector-Emitter Saturation Voltage & Large Collector Current High Power Dissipation PC = 1.3W (Ta=25 C) 2.500 7.400 2.900 1.100 7.800 1.500 3.900 3.000 4.100 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) 3.200 10.600 0.0

KSD1691 TO-126C Transistor (NPN) TO-126C 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 Features Low Collector-Emitter Saturation Voltage & Large Collector Current High Power Dissipation PC = 1.3W (Ta=25 C) 3.000 7.800 3.400 8.200 1.800 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) 2.200 4.040 4.240 Symbol Parameter Value Uni