KSD362N . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KSD362N
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 40 W
Tensión colector-base (Vcb): 150 V
Tensión colector-emisor (Vce): 70 V
Tensión emisor-base (Veb): 8 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 10 MHz
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: TO220
Búsqueda de reemplazo de transistor bipolar KSD362N
KSD362N Datasheet (PDF)
ksd362.pdf
KSD362B/W TV Horizontal Deflection Output Collector-Base Voltage : VCBO=150V Collector Current : IC=5A Collector Dissipation : PC=40W(TC=25C)TO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 70 V
ksd362.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD362 DESCRIPTION Collector-Base Breakdown Voltage- : V(BR)CBO= 150V(Min) Collector Current- IC= 5A Collector Power Dissipation- : PC= 40W@ TC= 25 APPLICATIONS Designed for B/W TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE
ksd363.pdf
KSD363B/W TV Horizontal Deflection Output Collector-Base Voltage : VCBO=300V Collector Current : IC=6A Collector Dissipation : PC=40W(TC=25C)TO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 120
ksd363.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
ksd363.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD363 DESCRIPTION Collector-Base Breakdown Voltage- : V(BR)CBO= 300V(Min) Collector Current- IC= 6A Collector Power Dissipation- : PC= 40W@ TC= 25 APPLICATIONS Designed for B/W TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
