KSD362N . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: KSD362N
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 40 W
   Tensión colector-base (Vcb): 150 V
   Tensión colector-emisor (Vce): 70 V
   Tensión emisor-base (Veb): 8 V
   Corriente del colector DC máxima (Ic): 5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 10 MHz
   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: TO220

Búsqueda de reemplazo de transistor bipolar KSD362N

KSD362N Datasheet (PDF)

8.1. Size:61K fairchild semi
ksd362.pdf

KSD362B/W TV Horizontal Deflection Output Collector-Base Voltage : VCBO=150V Collector Current : IC=5A Collector Dissipation : PC=40W(TC=25C)TO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 70 V

8.2. Size:134K inchange semiconductor
ksd362.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD362 DESCRIPTION Collector-Base Breakdown Voltage- : V(BR)CBO= 150V(Min) Collector Current- IC= 5A Collector Power Dissipation- : PC= 40W@ TC= 25 APPLICATIONS Designed for B/W TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE

9.1. Size:60K fairchild semi
ksd363.pdf

KSD363B/W TV Horizontal Deflection Output Collector-Base Voltage : VCBO=300V Collector Current : IC=6A Collector Dissipation : PC=40W(TC=25C)TO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 120

9.2. Size:179K onsemi
ksd363.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

9.3. Size:134K inchange semiconductor
ksd363.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD363 DESCRIPTION Collector-Base Breakdown Voltage- : V(BR)CBO= 300V(Min) Collector Current- IC= 6A Collector Power Dissipation- : PC= 40W@ TC= 25 APPLICATIONS Designed for B/W TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050