KSD362R Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KSD362R 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 40 W
Tensión colector-base (Vcb): 150 V
Tensión colector-emisor (Vce): 70 V
Tensión emisor-base (Veb): 8 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 10 MHz
Ganancia de corriente contínua (hFE): 40
Encapsulados: TO220
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KSD362R datasheet
ksd362.pdf
KSD362 B/W TV Horizontal Deflection Output Collector-Base Voltage VCBO=150V Collector Current IC=5A Collector Dissipation PC=40W(TC=25 C) TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 70 V
ksd362.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD362 DESCRIPTION Collector-Base Breakdown Voltage- V(BR)CBO= 150V(Min) Collector Current- IC= 5A Collector Power Dissipation- PC= 40W@ TC= 25 APPLICATIONS Designed for B/W TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE
ksd363.pdf
KSD363 B/W TV Horizontal Deflection Output Collector-Base Voltage VCBO=300V Collector Current IC=6A Collector Dissipation PC=40W(TC=25 C) TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 120
ksd363.pdf
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Otros transistores... KSD261Y, KSD288, KSD288O, KSD288R, KSD288Y, KSD362, KSD362N, KSD362O, BC639, KSD363, KSD363O, KSD363R, KSD363Y, KSD401, KSD401G, KSD401O, KSD401R
Parámetros del transistor bipolar y su interrelación.
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