KSD5060 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KSD5060
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 80 W
Tensión colector-base (Vcb): 1500 V
Tensión colector-emisor (Vce): 800 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 2.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 3 MHz
Ganancia de corriente contínua (hfe): 8
Paquete / Cubierta: TO247
Búsqueda de reemplazo de transistor bipolar KSD5060
KSD5060 Datasheet (PDF)
ksd5060.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5060 DESCRIPTION High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed High Reliability Built-in Damper Diode APPLICATIONS Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage
ksd5061.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5061 DESCRIPTION High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed High Reliability Built-in Damper Diode APPLICATIONS Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage
ksd5068.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5068 DESCRIPTION High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed High Reliability APPLICATIONS Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 1500 V VCEO Collector-E
ksd5065.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5065 DESCRIPTION High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed High Reliability APPLICATIONS Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 1500 V VCEO Collector-E
ksd5062.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5062 DESCRIPTION High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed High Reliability Built-in Damper Diode APPLICATIONS Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage
ksd5064.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5064 DESCRIPTION High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed High Reliability APPLICATIONS Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 1500 V VCEO Collector-E
ksd5066.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor KSD5066 DESCRIPTION High Breakdown Voltage- : VCBO= 1500V (Min) High Switching Speed High Reliability APPLICATIONS Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage 1500 V VCEO Collector-E
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
Liste
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