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KSD568R . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: KSD568R
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 40 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 7 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: TO220

 Búsqueda de reemplazo de transistor bipolar KSD568R

 

KSD568R Datasheet (PDF)

 8.1. Size:42K  fairchild semi
ksd568 ksd569.pdf

KSD568R
KSD568R

KSD568/569Low Frequency Power Amplifier Low Speed Switching Industrial Use Complement to KSB707/708TO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage : KSD568 60 V : KSD569 80 V VEBO Emitter-Base Vo

 9.1. Size:42K  fairchild semi
ksd560.pdf

KSD568R
KSD568R

KSD560Low Frequency Power Amplifier Low Speed Switching Industrial Use Complement to KSB601TO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Silicon Darlington TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collect

 9.2. Size:161K  onsemi
ksd560.pdf

KSD568R
KSD568R

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.3. Size:190K  inchange semiconductor
ksd560.pdf

KSD568R
KSD568R

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor KSD560DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)High DC Current Gain: h = 2000(Min) @I = 3.0AFE CLow Saturation VoltageComplement to Type KSB601Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequenc

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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