KSD568Y Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KSD568Y  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 40 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 7 V

Corriente del colector DC máxima (Ic): 7 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 120

Encapsulados: TO220

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KSD568Y datasheet

 8.1. Size:42K  fairchild semi
 ksd568 ksd569.pdf pdf_icon

KSD568Y

KSD568/569 Low Frequency Power Amplifier Low Speed Switching Industrial Use Complement to KSB707/708 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage KSD568 60 V KSD569 80 V VEBO Emitter-Base Vo

 9.1. Size:42K  fairchild semi
 ksd560.pdf pdf_icon

KSD568Y

KSD560 Low Frequency Power Amplifier Low Speed Switching Industrial Use Complement to KSB601 TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collect

 9.2. Size:161K  onsemi
 ksd560.pdf pdf_icon

KSD568Y

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.3. Size:190K  inchange semiconductor
 ksd560.pdf pdf_icon

KSD568Y

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor KSD560 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 100V(Min) CEO(SUS) High DC Current Gain h = 2000(Min) @I = 3.0A FE C Low Saturation Voltage Complement to Type KSB601 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequenc

MOSTRAR MÁS

Otros transistores... KSD526Y, KSD560, KSD560O, KSD560R, KSD560Y, KSD568, KSD568O, KSD568R, 8050, KSD569, KSD569O, KSD569R, KSD569Y, KSD5740, KSD5741, KSD5742, KSD73