KSE350 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KSE350
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 20 W
Tensión colector-base (Vcb): 300 V
Tensión colector-emisor (Vce): 300 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta: TO126
Búsqueda de reemplazo de transistor bipolar KSE350
KSE350 Datasheet (PDF)
kse350.pdf
KSE350High Voltage General Purpose Applications High Collector-Emitter Breakdown Voltage Suitable for Transformer Complement to KSE340TO-12611. Emitter 2.Collector 3.BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage - 300 V VCEO Collector-Emitter Voltage - 300 V
kse350.pdf
KSE350 PNP EPITAXIAL SILICON TRANSISTORHIGH COLLECTOR-EMITTERTO-126SUSTAINING VOLTAGEHIGH VOLTAGE GENERAL PURPOSEAPPLICATIONSSUITABLE FOR TRANSFORMERComplement to KSE340ABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector- Base Voltage VCBO -300 V Collector-Emitter Voltage VCEO -300 V Emitter- Base Voltage VEBO -5 V Collector Current IC -500 mA Collect
kse340 kse350.pdf
HIGH VOLTAGE COMPLEMENT TRANSISTORS RKSE340 KSE350 APPLICATIONS Audio Series Regulator General Purpose FEATURES High current capability High reliability RoHS RoHS pro
kse350.pdf
isc Silicon PNP Power Transistor KSE350DESCRIPTIONHigh Collector-Emitter breakdown voltageLow Collector Saturation VoltageComplement to Type KSE340Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh voltage general purpose applicationsSuitable for transformABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
kse350j.pdf
isc Silicon PNP Power Transistor KSE350JDESCRIPTIONHigh Collector-Emitter breakdown voltageLow Collector Saturation VoltageComplement to Type KSE340J100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh voltage general purpose applicationsSuitable for transformABSOLUTE MAXIMUM RATINGS(T =25)
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2N2021
History: 2N2021
Liste
Recientemente añadidas las descripciónes de los transistores:
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