KSE800 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

KSE800/801/802/803Monolithic Construction With Built-in Base-Emitter Resistors High DC Current Gain : hFE= 750 (Min.) @ IC= 1.5 and 2.0A DC Complement to KSE700/701/702/703TO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon Darlington TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedEquivalent CircuitCSymbol Parameter Value Units VCBO Coll

NPN EPITAXIALKSE800/801/803 SILICON DARLINGTON TRANSISTORHIGH DC CURRENT GAINTO-126MIN hFE= 750 I = -1.5 and -2.0A DCCMONOLITHIC CONSTRUCTION WITHBUILT-IN BASE-EMITTER RESISTORSComplement to KSE700/701/702/703ABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector- Base Voltage VCBO : KSE800/801 60 V : KSE802/803 80 V Collector-Emitter Voltage VCEO : K

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

KSE800/801/802/803Monolithic Construction With Built-in Base-Emitter Resistors High DC Current Gain : hFE= 750 (Min.) @ IC= 1.5 and 2.0A DC Complement to KSE700/701/702/703TO-12611. Emitter 2.Collector 3.BaseNPN Epitaxial Silicon Darlington TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedEquivalent CircuitCSymbol Parameter Value Units VCBO Coll