KSH112 Todos los transistores

 

KSH112 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: KSH112
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 20 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 100 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 2 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 25 MHz
   Capacitancia de salida (Cc): 100 pF
   Ganancia de corriente contínua (hfe): 10000
   Paquete / Cubierta: TO252

 Búsqueda de reemplazo de transistor bipolar KSH112

 

KSH112 Datasheet (PDF)

 ..1. Size:57K  fairchild semi
ksh112.pdf

KSH112
KSH112

KSH112D-PAK for Surface Mount Applications High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, - I Suffix)D-PAK I-PAK11 Electrically Similar to Popular TIP1121.Base 2.Collector 3.EmitterNPN Silicon Darlington TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted

 ..2. Size:24K  samsung
ksh112.pdf

KSH112
KSH112

KSH112 NPN SILICON DARLINGTON TRANSISTORD-PACK FOR SURFACE MOUNTD-PAKAPPLICATIONS High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I. PACK, - I Suffix)1 Electrically Similar to Popular TIP112ABSOLUTE MAXIMUM RATINGS1. Base 2. Collector 3. EmitterCharacteristic Symbol Rating Un

 ..3. Size:256K  inchange semiconductor
ksh112.pdf

KSH112
KSH112

isc Silicon NPN Power Transistor KSH112DESCRIPTIONHigh DC current gainBuilt-in a damper diode at E-CElectrically similar to popular TIP112100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low speedswitching applications.ABSOLUTE MAXIMUM RATINGS(T =25)

 9.1. Size:58K  fairchild semi
ksh117.pdf

KSH112
KSH112

KSH117D-PAK for Surface Mount Applications High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, - I Suffix)D-PAK I-PAK11 Electrically Similar to Popular TIP1171.Base 2.Collector 3.EmitterPNP Silicon Darlington TransistorAbsolute Maximum Ratings TC=25C unless otherwise noted

 9.2. Size:23K  samsung
ksh117.pdf

KSH112

KSH117 PNP SILICON DARLINGTON TRANSISTORD-PACK FOR SURFACE MOUNTD-PAKAPPLICATIONS High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I. PACK, - I Suffix)1 Electrically Similar to Popular TIP117ABSOLUTE MAXIMUM RATINGS1. Base 2. Collector 3. EmitterCharacteristic Symbol Rating Un

 9.3. Size:290K  inchange semiconductor
ksh117.pdf

KSH112
KSH112

INCHANGE Semiconductorisc Silicon PNP Power Transistor KSH117DESCRIPTIONHigh DC current gainBuilt-in a damper diode at E-CElectrically similar to popular TIP117100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general purpose amplifier and low speedswitching applications.ABSOLUTE MAX

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

 

 
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