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KSH340 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: KSH340
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 15 W
   Tensión colector-base (Vcb): 300 V
   Tensión colector-emisor (Vce): 300 V
   Tensión emisor-base (Veb): 3 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: TO252
 

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KSH340 Datasheet (PDF)

 ..1. Size:43K  fairchild semi
 ksh340.pdf pdf_icon

KSH340

KSH340High Voltage Power Transistors D-PAK for Surface Mount Applications Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, - I Suffix)D-PAK I-PAK111.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Co

 ..2. Size:22K  samsung
 ksh340.pdf pdf_icon

KSH340

KSH340 NPN EPITAXIAL SILICON TRANSISTORHIGH VOLTAGE POWER TRANSISTORSD-PAKDPAK FOR SURFACE MOUNT APPLICATIONS Lead Formed for Surface Mount Applications (No Suffix) Straight Lead ( - I Suffix)1ABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit1. Base 2. Collector 3. Emitter Collector Base Voltage VCBO 300 V Collector Emitter Voltage VCEO 300 VI-PAK

 ..3. Size:250K  inchange semiconductor
 ksh340.pdf pdf_icon

KSH340

isc Silicon NPN Power Transistor KSH340DESCRIPTIONLead formed for surface mount applications(NO suffix)Straight lead(IPAK,Isuffix)DPAK for surface mount applications100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh voltage power transistorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: TP3392

 

 
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