KSH340I Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KSH340I  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 15 W

Tensión colector-base (Vcb): 300 V

Tensión colector-emisor (Vce): 300 V

Tensión emisor-base (Veb): 3 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 30

Encapsulados: TO252

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KSH340I datasheet

 8.1. Size:43K  fairchild semi
 ksh340.pdf pdf_icon

KSH340I

KSH340 High Voltage Power Transistors D-PAK for Surface Mount Applications Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, - I Suffix) D-PAK I-PAK 11 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Co

 8.2. Size:22K  samsung
 ksh340.pdf pdf_icon

KSH340I

KSH340 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE POWER TRANSISTORS D-PAK DPAK FOR SURFACE MOUNT APPLICATIONS Lead Formed for Surface Mount Applications (No Suffix) Straight Lead ( - I Suffix) 1 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit 1. Base 2. Collector 3. Emitter Collector Base Voltage VCBO 300 V Collector Emitter Voltage VCEO 300 V I-PAK

 8.3. Size:250K  inchange semiconductor
 ksh340.pdf pdf_icon

KSH340I

isc Silicon NPN Power Transistor KSH340 DESCRIPTION Lead formed for surface mount applications(NO suffix) Straight lead(IPAK, I suffix) DPAK for surface mount applications 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High voltage power transistors ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P

Otros transistores... KSH31C, KSH31CI, KSH31I, KSH32, KSH32C, KSH32CI, KSH32I, KSH340, D209L, KSH350, KSH350I, KSH41, KSH41C, KSH41CI, KSH42, KSH42C, KSH42CI