All Transistors. KSH340I Datasheet

 

KSH340I Datasheet and Replacement


   Type Designator: KSH340I
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 15 W
   Maximum Collector-Base Voltage |Vcb|: 300 V
   Maximum Collector-Emitter Voltage |Vce|: 300 V
   Maximum Emitter-Base Voltage |Veb|: 3 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: TO252
 

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KSH340I Datasheet (PDF)

 8.1. Size:43K  fairchild semi
 ksh340.pdf pdf_icon

KSH340I

KSH340High Voltage Power Transistors D-PAK for Surface Mount Applications Lead Formed for Surface Mount Applications (No Suffix) Straight Lead (I-PAK, - I Suffix)D-PAK I-PAK111.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Co

 8.2. Size:22K  samsung
 ksh340.pdf pdf_icon

KSH340I

KSH340 NPN EPITAXIAL SILICON TRANSISTORHIGH VOLTAGE POWER TRANSISTORSD-PAKDPAK FOR SURFACE MOUNT APPLICATIONS Lead Formed for Surface Mount Applications (No Suffix) Straight Lead ( - I Suffix)1ABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit1. Base 2. Collector 3. Emitter Collector Base Voltage VCBO 300 V Collector Emitter Voltage VCEO 300 VI-PAK

 8.3. Size:250K  inchange semiconductor
 ksh340.pdf pdf_icon

KSH340I

isc Silicon NPN Power Transistor KSH340DESCRIPTIONLead formed for surface mount applications(NO suffix)Straight lead(IPAK,Isuffix)DPAK for surface mount applications100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh voltage power transistorsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

Keywords - KSH340I transistor datasheet

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