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KSH50 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: KSH50
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 15 W
   Tensión colector-base (Vcb): 500 V
   Tensión colector-emisor (Vce): 400 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 10 MHz
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: TO252

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KSH50 Datasheet (PDF)

 ..1. Size:50K  fairchild semi
ksh47 ksh50.pdf

KSH50
KSH50

KSH47/50High Voltage and High Reliability D-PAK for Surface Mount Applications Lead Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, - I Suffix) Electrically Similar to Popular TIP47 and TIP50D-PAK I-PAK111.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter

 ..2. Size:251K  inchange semiconductor
ksh50.pdf

KSH50
KSH50

isc Silicon NPN Power Transistor KSH50DESCRIPTIONLead formed for surface mount applications(NO suffix)Straight lead(IPAK,Isuffix)Electrically similar to popular TIP50High voltage and high reliability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSdesigned for line operated audio output a

 0.1. Size:608K  semihow
ksh5027f.pdf

KSH50
KSH50

KSH5027F SEMIHOW REV.A0,Oct 2007 KSH5027FKSH5027F High Voltage and High Reliability - High Speed Switching - Wide SOA 3 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 50 Watts TO-220F CHARACTERISTICS SYMBOL RATING UNIT 1. Base 2. Collector Collector-Base Voltage VCBO 1100 V 3. Emitter Collector-Emitter Volta

 0.2. Size:622K  semihow
ksh5027a.pdf

KSH50
KSH50

KSH5027A SEMIHOW REV.A0,Oct 2007 KSH5027AKSH5027A High Voltage and High Reliability - High Speed Switching - Wide SOA 3 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 50 Watts TO-220 CHARACTERISTICS SYMBOL RATING UNIT 1. Base 2. Collector Collector-Base Voltage VCBO 1100 V 3. Emitter Collector-Emitter Voltag

 0.3. Size:608K  semihow
ksh5027af.pdf

KSH50
KSH50

KSH5027AF SEMIHOW REV.A0,Oct 2007 KSH5027AFKSH5027AF High Voltage and High Reliability - High Speed Switching - Wide SOA 3 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 50 Watts TO-220F CHARACTERISTICS SYMBOL RATING UNIT 1. Base 2. Collector Collector-Base Voltage VCBO 1100 V 3. Emitter Collector-Emitter Vo

 0.4. Size:622K  semihow
ksh5027.pdf

KSH50
KSH50

KSH5027 SEMIHOW REV.A0,Oct 2007 KSH5027KSH5027 High Voltage and High Reliability - High Speed Switching - Wide SOA 3 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 50 Watts TO-220 CHARACTERISTICS SYMBOL RATING UNIT 1. Base 2. Collector Collector-Base Voltage VCBO 1100 V 3. Emitter Collector-Emitter Voltage V

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History: 2N138B

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