Биполярный транзистор KSH50 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: KSH50
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 15 W
Макcимально допустимое напряжение коллектор-база (Ucb): 500 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 10 MHz
Статический коэффициент передачи тока (hfe): 30
Корпус транзистора: TO252
KSH50 Datasheet (PDF)
ksh47 ksh50.pdf
KSH47/50High Voltage and High Reliability D-PAK for Surface Mount Applications Lead Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, - I Suffix) Electrically Similar to Popular TIP47 and TIP50D-PAK I-PAK111.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter
ksh50.pdf
isc Silicon NPN Power Transistor KSH50DESCRIPTIONLead formed for surface mount applications(NO suffix)Straight lead(IPAK,Isuffix)Electrically similar to popular TIP50High voltage and high reliability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSdesigned for line operated audio output a
ksh5027f.pdf
KSH5027F SEMIHOW REV.A0,Oct 2007 KSH5027FKSH5027F High Voltage and High Reliability - High Speed Switching - Wide SOA 3 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 50 Watts TO-220F CHARACTERISTICS SYMBOL RATING UNIT 1. Base 2. Collector Collector-Base Voltage VCBO 1100 V 3. Emitter Collector-Emitter Volta
ksh5027a.pdf
KSH5027A SEMIHOW REV.A0,Oct 2007 KSH5027AKSH5027A High Voltage and High Reliability - High Speed Switching - Wide SOA 3 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 50 Watts TO-220 CHARACTERISTICS SYMBOL RATING UNIT 1. Base 2. Collector Collector-Base Voltage VCBO 1100 V 3. Emitter Collector-Emitter Voltag
ksh5027af.pdf
KSH5027AF SEMIHOW REV.A0,Oct 2007 KSH5027AFKSH5027AF High Voltage and High Reliability - High Speed Switching - Wide SOA 3 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 50 Watts TO-220F CHARACTERISTICS SYMBOL RATING UNIT 1. Base 2. Collector Collector-Base Voltage VCBO 1100 V 3. Emitter Collector-Emitter Vo
ksh5027.pdf
KSH5027 SEMIHOW REV.A0,Oct 2007 KSH5027KSH5027 High Voltage and High Reliability - High Speed Switching - Wide SOA 3 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 50 Watts TO-220 CHARACTERISTICS SYMBOL RATING UNIT 1. Base 2. Collector Collector-Base Voltage VCBO 1100 V 3. Emitter Collector-Emitter Voltage V
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050