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KSH50I . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: KSH50I
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 15 W
   Tensión colector-base (Vcb): 500 V
   Tensión colector-emisor (Vce): 400 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 10 MHz
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: TO252
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KSH50I Datasheet (PDF)

 9.1. Size:50K  fairchild semi
ksh47 ksh50.pdf pdf_icon

KSH50I

KSH47/50High Voltage and High Reliability D-PAK for Surface Mount Applications Lead Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, - I Suffix) Electrically Similar to Popular TIP47 and TIP50D-PAK I-PAK111.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter

 9.2. Size:608K  semihow
ksh5027f.pdf pdf_icon

KSH50I

KSH5027F SEMIHOW REV.A0,Oct 2007 KSH5027FKSH5027F High Voltage and High Reliability - High Speed Switching - Wide SOA 3 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 50 Watts TO-220F CHARACTERISTICS SYMBOL RATING UNIT 1. Base 2. Collector Collector-Base Voltage VCBO 1100 V 3. Emitter Collector-Emitter Volta

 9.3. Size:622K  semihow
ksh5027a.pdf pdf_icon

KSH50I

KSH5027A SEMIHOW REV.A0,Oct 2007 KSH5027AKSH5027A High Voltage and High Reliability - High Speed Switching - Wide SOA 3 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 50 Watts TO-220 CHARACTERISTICS SYMBOL RATING UNIT 1. Base 2. Collector Collector-Base Voltage VCBO 1100 V 3. Emitter Collector-Emitter Voltag

 9.4. Size:608K  semihow
ksh5027af.pdf pdf_icon

KSH50I

KSH5027AF SEMIHOW REV.A0,Oct 2007 KSH5027AFKSH5027AF High Voltage and High Reliability - High Speed Switching - Wide SOA 3 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 50 Watts TO-220F CHARACTERISTICS SYMBOL RATING UNIT 1. Base 2. Collector Collector-Base Voltage VCBO 1100 V 3. Emitter Collector-Emitter Vo

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History: 2PB709AQW | FJX3002R | 2N2108 | MJD200T4G | RT3T33M | NSS40301MZ4T3G | 2SC3262

 

 
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