Биполярный транзистор KSH50I
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: KSH50I
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 15
W
Макcимально допустимое напряжение коллектор-база (Ucb): 500
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V
Макcимальный постоянный ток коллектора (Ic): 1
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 10
MHz
Статический коэффициент передачи тока (hfe): 30
Корпус транзистора:
TO252
Аналоги (замена) для KSH50I
KSH50I
Datasheet (PDF)
9.1. Size:50K fairchild semi
ksh47 ksh50.pdf 
KSH47/50High Voltage and High Reliability D-PAK for Surface Mount Applications Lead Formed for Surface Mount Application (No Suffix) Straight Lead (I-PAK, - I Suffix) Electrically Similar to Popular TIP47 and TIP50D-PAK I-PAK111.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter
9.2. Size:608K semihow
ksh5027f.pdf 
KSH5027F SEMIHOW REV.A0,Oct 2007 KSH5027FKSH5027F High Voltage and High Reliability - High Speed Switching - Wide SOA 3 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 50 Watts TO-220F CHARACTERISTICS SYMBOL RATING UNIT 1. Base 2. Collector Collector-Base Voltage VCBO 1100 V 3. Emitter Collector-Emitter Volta
9.3. Size:622K semihow
ksh5027a.pdf 
KSH5027A SEMIHOW REV.A0,Oct 2007 KSH5027AKSH5027A High Voltage and High Reliability - High Speed Switching - Wide SOA 3 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 50 Watts TO-220 CHARACTERISTICS SYMBOL RATING UNIT 1. Base 2. Collector Collector-Base Voltage VCBO 1100 V 3. Emitter Collector-Emitter Voltag
9.4. Size:608K semihow
ksh5027af.pdf 
KSH5027AF SEMIHOW REV.A0,Oct 2007 KSH5027AFKSH5027AF High Voltage and High Reliability - High Speed Switching - Wide SOA 3 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 50 Watts TO-220F CHARACTERISTICS SYMBOL RATING UNIT 1. Base 2. Collector Collector-Base Voltage VCBO 1100 V 3. Emitter Collector-Emitter Vo
9.5. Size:622K semihow
ksh5027.pdf 
KSH5027 SEMIHOW REV.A0,Oct 2007 KSH5027KSH5027 High Voltage and High Reliability - High Speed Switching - Wide SOA 3 Amperes NPN Silicon Power Transistor Absolute Maximum Ratings TC=25 unless otherwise noted 50 Watts TO-220 CHARACTERISTICS SYMBOL RATING UNIT 1. Base 2. Collector Collector-Base Voltage VCBO 1100 V 3. Emitter Collector-Emitter Voltage V
9.6. Size:251K inchange semiconductor
ksh50.pdf 
isc Silicon NPN Power Transistor KSH50DESCRIPTIONLead formed for surface mount applications(NO suffix)Straight lead(IPAK,Isuffix)Electrically similar to popular TIP50High voltage and high reliability100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSdesigned for line operated audio output a
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