KSP42 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

KSP42/43High Voltage Transistor Collector-Emitter Voltage: VCEO=KSP42: 300VKSP43: 200V Collector Power Dissipation: PC(max)=625mW TO-9211. Emitter 2. Base 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector Base Voltage : KSP42 300 V : KSP43 200 VVCEO Collector-Emitter V

KSP42/43 NPN EPITAXIAL SILICON TRANSISTORHIGH VOLTAGE TRANSISTORTO-92 Collector-Emitter Voltage: VCEO=KSP42: 300VKSP43: 200V Collector Dissipation: PC(max)=625mWABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector Base Voltage VCBO KST42 300 V KST43 200 VCollector-Emitter Voltage VCEO KST42 300 V KST43 200 VEmitter-Base Voltage VEBO V

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

TRANSISTOR KSP42A MAIN CHARACTERISTICS FEATURES IC 500mA Epitaxial silicon VCEO 300V High switching speed PC 625mW KSP92A Complementary to KSP92A RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power amplifier