KSR1006 Todos los transistores

 

KSR1006 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KSR1006

Material: Si

Polaridad de transistor: Pre-Biased-NPN

Resistencia de Entrada Base R1 = 10 kOhm

Resistencia Base-Emisor R2 = 47 kOhm

Ratio típica de resistencia R1/R2 = 0.21

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.3 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 250 MHz

Capacitancia de salida (Cc): 3.7 pF

Ganancia de corriente contínua (hFE): 68

Encapsulados: TO92

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KSR1006 datasheet

 ..1. Size:42K  samsung
 ksr1006.pdf pdf_icon

KSR1006

KSR1006 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=10 , R2=47 ) Complement to KSR2006 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Vo

 8.1. Size:42K  samsung
 ksr1008.pdf pdf_icon

KSR1006

KSR1008 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=47 , R2=22 ) Complement to KSR2008 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Vo

 8.2. Size:43K  samsung
 ksr1007.pdf pdf_icon

KSR1006

KSR1007 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=22 , R2=47 ) Complement to KSR2007 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Vo

 8.3. Size:38K  samsung
 ksr1009.pdf pdf_icon

KSR1006

KSR1009 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=4.7 ) Complement to KSR2009 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VE

MOSTRAR MÁS

Otros transistores... KSP8599, KSP92, KSP93, KSR1001, KSR1002, KSR1003, KSR1004, KSR1005, 2N3906, KSR1007, KSR1008, KSR1009, KSR1010, KSR1011, KSR1012, KSR1101, KSR1102

 

 

 

 

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