KSR1110 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KSR1110
Código: R10
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 10 kOhm
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 250 MHz
Capacitancia de salida (Cc): 3.7 pF
Ganancia de corriente contínua (hFE): 100
Encapsulados: SOT23
Búsqueda de reemplazo de KSR1110
- Selecciónⓘ de transistores por parámetros
KSR1110 datasheet
ksr1110.pdf
KSR1110 Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=10K ) Complement to KSR2110 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R10 R B NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter V
ksr1114.pdf
KSR1114 Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1 =4.7K , R2=47K ) Complement to KSR2114 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R1 R14 B R2 NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise noted
ksr1111.pdf
KSR1111 Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R=22K ) Complement to KSR2111 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R11 R B NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter
ksr1113.pdf
KSR1113 Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit 3 Built in bias Resistor (R1 =2.2K , R2=47K ) Complement to KSR2113 2 SOT-23 1 1. Base 2. Emitter 3. Collector Equivalent Circuit Marking C R1 R13 B R2 NPN Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise noted
Otros transistores... KSR1101, KSR1102, KSR1104, KSR1105, KSR1106, KSR1107, KSR1108, KSR1109, BD335, KSR1111, KSR1112, KSR1113, KSR1114, KSR2001, KSR2002, KSR2003, KSR2004
History: 3DD512
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
svt20240nt | tip41c replacement | b772m transistor | mj15003g datasheet | irfp460n datasheet | mj15025g | ksa1381 replacement | m3056m mosfet





