KSR2009 Todos los transistores

 

KSR2009 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KSR2009

Material: Si

Polaridad de transistor: Pre-Biased-PNP

Resistencia de Entrada Base R1 = 4.7 kOhm

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.3 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 200 MHz

Capacitancia de salida (Cc): 5.5 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: TO92

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KSR2009 datasheet

 ..1. Size:45K  samsung
ksr2009.pdf pdf_icon

KSR2009

KSR2009 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=4.7 ) Complement to KSR1009 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage

 8.1. Size:34K  fairchild semi
ksr2005.pdf pdf_icon

KSR2009

KSR2005 Switching Application (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7K , R2=10K ) Complement to KSR1005 TO-92 1 1. Emitter 2. Collector 3. Base Equivalent Circuit C R1 B R2 PNP Epitaxial Silicon Transistor E Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Va

 8.2. Size:42K  samsung
ksr2008.pdf pdf_icon

KSR2009

KSR2008 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=47 , R2=22 ) Complement to KSR1008 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base

 8.3. Size:42K  samsung
ksr2004.pdf pdf_icon

KSR2009

KSR2004 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) Switching circuit, Inverter, Interface circuit, Driver Circuit TO-92 Built in bias Resistor (R1=47 , R2=47 ) Complement to KSR1004 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base V

Otros transistores... KSR2001, KSR2002, KSR2003, KSR2004, KSR2005, KSR2006, KSR2007, KSR2008, 2SC2625, KSR2010, KSR2011, KSR2011F, KSR2012, KSR2012F, KSR2101, KSR2102, KSR2103

 

 

 


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