KSR2012 Todos los transistores

 

KSR2012 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KSR2012

Material: Si

Polaridad de transistor: Pre-Biased-PNP

Resistencia de Entrada Base R1 = 47 kOhm

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.3 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 200 MHz

Capacitancia de salida (Cc): 5.5 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: TO92

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KSR2012 datasheet

 ..1. Size:20K  samsung
 ksr2012.pdf pdf_icon

KSR2012

KSR2012 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=47 ) Complement to KSR1012 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage V

 8.1. Size:20K  samsung
 ksr2011.pdf pdf_icon

KSR2012

KSR2011 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=22 ) Complement to KSR1011 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage V

 8.2. Size:41K  samsung
 ksr2010.pdf pdf_icon

KSR2012

KSR2010 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=10 ) Complement to KSR1010 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage V

 8.3. Size:22K  samsung
 ksr2013.pdf pdf_icon

KSR2012

KSR2013 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION (Bias Resistor Built In) TO-92 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=2.2 , R2=47 ) Complement to KSR1013 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base

MOSTRAR MÁS

Otros transistores... KSR2005, KSR2006, KSR2007, KSR2008, KSR2009, KSR2010, KSR2011, KSR2011F, TIP42, KSR2012F, KSR2101, KSR2102, KSR2103, KSR2104, KSR2105, KSR2106, KSR2107

 

 

 

 

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