KSR2012 Todos los transistores

 

KSR2012 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: KSR2012
   Material: Si
   Polaridad de transistor: Pre-Biased-PNP
   Resistencia de Entrada Base R1 = 47 kOhm

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.3 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 40 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.1 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 200 MHz
   Capacitancia de salida (Cc): 5.5 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: TO92
     - Selección de transistores por parámetros

 

KSR2012 Datasheet (PDF)

 ..1. Size:20K  samsung
 ksr2012.pdf pdf_icon

KSR2012

KSR2012 PNP EPITAXIAL SILICON TRANSISTORSWITCHING APPLICATION (Bias Resistor Built In)TO-92 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=47 ) Complement to KSR1012ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO -40 VCollector-Emitter Voltage VCEO -40 VEmitter-Base Voltage V

 8.1. Size:20K  samsung
 ksr2011.pdf pdf_icon

KSR2012

KSR2011 PNP EPITAXIAL SILICON TRANSISTORSWITCHING APPLICATION (Bias Resistor Built In)TO-92 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=22 ) Complement to KSR1011ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO -40 VCollector-Emitter Voltage VCEO -40 VEmitter-Base Voltage V

 8.2. Size:41K  samsung
 ksr2010.pdf pdf_icon

KSR2012

KSR2010 PNP EPITAXIAL SILICON TRANSISTORSWITCHING APPLICATION (Bias Resistor Built In)TO-92 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=10 ) Complement to KSR1010ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO -40 VCollector-Emitter Voltage VCEO -40 VEmitter-Base Voltage V

 8.3. Size:22K  samsung
 ksr2013.pdf pdf_icon

KSR2012

KSR2013 PNP EPITAXIAL SILICON TRANSISTORSWITCHING APPLICATION (Bias Resistor Built In)TO-92 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=2.2 , R2=47 ) Complement to KSR1013ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO -50 VCollector-Emitter Voltage VCEO -50 VEmitter-Base

MOSTRAR MÁS

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: DDTA143TE | MJE350G | ZXT13P12DE6 | BSV44 | BUP43 | KT325A | BC847CMTF

 

 
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