All Transistors. KSR2012 Datasheet

 

KSR2012 Datasheet and Replacement


   Type Designator: KSR2012
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 47 kOhm
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 40 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 200 MHz
   Collector Capacitance (Cc): 5.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: TO92
      - BJT Cross-Reference Search

   

KSR2012 Datasheet (PDF)

 ..1. Size:20K  samsung
 ksr2012.pdf pdf_icon

KSR2012

KSR2012 PNP EPITAXIAL SILICON TRANSISTORSWITCHING APPLICATION (Bias Resistor Built In)TO-92 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=47 ) Complement to KSR1012ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO -40 VCollector-Emitter Voltage VCEO -40 VEmitter-Base Voltage V

 8.1. Size:20K  samsung
 ksr2011.pdf pdf_icon

KSR2012

KSR2011 PNP EPITAXIAL SILICON TRANSISTORSWITCHING APPLICATION (Bias Resistor Built In)TO-92 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=22 ) Complement to KSR1011ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO -40 VCollector-Emitter Voltage VCEO -40 VEmitter-Base Voltage V

 8.2. Size:41K  samsung
 ksr2010.pdf pdf_icon

KSR2012

KSR2010 PNP EPITAXIAL SILICON TRANSISTORSWITCHING APPLICATION (Bias Resistor Built In)TO-92 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R=10 ) Complement to KSR1010ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO -40 VCollector-Emitter Voltage VCEO -40 VEmitter-Base Voltage V

 8.3. Size:22K  samsung
 ksr2013.pdf pdf_icon

KSR2012

KSR2013 PNP EPITAXIAL SILICON TRANSISTORSWITCHING APPLICATION (Bias Resistor Built In)TO-92 Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=2.2 , R2=47 ) Complement to KSR1013ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO -50 VCollector-Emitter Voltage VCEO -50 VEmitter-Base

SHOW MORE

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: NPS3725 | R8066 | ECG95 | 2SD1376 | C8050C | BC847CMTF | 3DA150C

Keywords - KSR2012 transistor datasheet

 KSR2012 cross reference
 KSR2012 equivalent finder
 KSR2012 lookup
 KSR2012 substitution
 KSR2012 replacement

 

 
Back to Top

 


 
.