KST5089 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

KST5088/50893Low Noise Transistor2SOT-2311. Base 2. Emitter 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage: KST5088 35 V: KST5089 30 VVCEO Collector-Emitter Voltage: KST5088 30 V: KST5089 25 VVEBO Emitter-Base Voltage 4.5 VIC Collector Current 50 mAPC

KST5086/5087Low Noise Transistor32SOT-231PNP Epitaxial Silicon Transistor1. Base 2. Emitter 3. CollectorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage -50 VVCEO Collector-Emitter Voltage -50 VVEBO Emitter-Base Voltage -3 VIC Collector Current -50 mAPC Collector Power Dissipation 350 mWTSTG Storage Te

KST5088/5089 NPN EPITAXIAL SILICON TRANSISTORLOW NOISE TRANSISTORSOT-23ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating Unit Cllector-Base Voltage VCBO:KST5088 35 V:KST5089 30 V Collector-Emitter Voltage VCEO :KST5088 30 V:KST5089 25 V Emitter-Base Voltage VEBO 4.5 V Collector Current IC 50 mA Collector Dissipation PC 350 mW Storage Temperature TSTG

KST5086/5087 PNP EPITAXIAL SILICON TRANSISTORLOW NOISE TRANSISTORSOT-23ABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCllector-Base Voltage VCBO -50 VCollector-Emitter Voltage VCEO -50 VEmitter-Base Voltage VEBO -3 VCollector Current IC -50 mACollector Dissipation PC 350 mWStorage Temperature TSTG 150 1. Base 2. Emitter 3. CollectorELECTRICAL CHARA

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