KST5089. Equivalente. Reemplazo. Todos los transistores. Hoja de especificaciones. Principales características

KST5089 datasheet

8.1. Size:56K fairchild semi
kst5088.pdf pdf_icon

KST5088/5089 3 Low Noise Transistor 2 SOT-23 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage KST5088 35 V KST5089 30 V VCEO Collector-Emitter Voltage KST5088 30 V KST5089 25 V VEBO Emitter-Base Voltage 4.5 V IC Collector Current 50 mA PC

8.2. Size:57K fairchild semi
kst5086 kst5087.pdf pdf_icon

KST5086/5087 Low Noise Transistor 3 2 SOT-23 1 PNP Epitaxial Silicon Transistor 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -3 V IC Collector Current -50 mA PC Collector Power Dissipation 350 mW TSTG Storage Te

8.3. Size:56K samsung
kst5088.pdf pdf_icon

KST5088/5089 NPN EPITAXIAL SILICON TRANSISTOR LOW NOISE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Cllector-Base Voltage VCBO KST5088 35 V KST5089 30 V Collector-Emitter Voltage VCEO KST5088 30 V KST5089 25 V Emitter-Base Voltage VEBO 4.5 V Collector Current IC 50 mA Collector Dissipation PC 350 mW Storage Temperature TSTG

8.4. Size:51K samsung
kst5086.pdf pdf_icon

KST5086/5087 PNP EPITAXIAL SILICON TRANSISTOR LOW NOISE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Cllector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -3 V Collector Current IC -50 mA Collector Dissipation PC 350 mW Storage Temperature TSTG 150 1. Base 2. Emitter 3. Collector ELECTRICAL CHARA