KST5550 Todos los transistores

 

KST5550 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KST5550

Código: 1F

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.35 W

Tensión colector-base (Vcb): 160 V

Tensión colector-emisor (Vce): 140 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 0.6 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Capacitancia de salida (Cc): 6 pF

Ganancia de corriente contínua (hFE): 60

Encapsulados: SOT23

 Búsqueda de reemplazo de KST5550

- Selecciónⓘ de transistores por parámetros

 

KST5550 datasheet

 ..1. Size:56K  fairchild semi
kst5550.pdf pdf_icon

KST5550

KST5550 High Voltage Transistor 3 2 SOT-23 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 140 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Power Dissipation 350 mW TSTG Storage Tempe

 8.1. Size:44K  fairchild semi
kst5551.pdf pdf_icon

KST5550

KST5551 Amplifier Transistor Collector-Emitter Voltage VCEO=160V 3 Collector Power Dissipation PC (max)=350mW 2 SOT-23 1 Mark G1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base

 9.1. Size:44K  fairchild semi
kst55 kst56.pdf pdf_icon

KST5550

KST55/56 Driver Transistor Collector-Emitter Voltage VCEO = KST55 - 60V 3 KST56 - 80V Collector Power Dissipation PC (max) = 350mW Complement to KST05/06 2 SOT-23 1 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector Base Voltage KST55 -60 V K

 9.2. Size:21K  samsung
kst55.pdf pdf_icon

KST5550

KST55/56 PNP EPITAXIAL SILICON TRANSISTOR DRIVER TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector Base Voltage VCBO KST55 -60 V KST56 -80 V Collector-Emitter Voltage VCEO KST55 -60 V KST56 -80 V Emitter-Base Voltage VEBO -4 V Collector Current IC -500 mA Collector Dissipation PC 350 mW Storage Temperature TSTG 150 Therma

Otros transistores... KST4401 , KST4403 , KST5086 , KST5087 , KST5088 , KST5089 , KST5179 , KST55 , 2N3055 , KST56 , KST63 , KST64 , KST6428 , KST812M3 , KST812M4 , KST812M5 , KST812M6 .

 

 

 


🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550

 

 

 

Popular searches

2n3904 | bc547 datasheet | k3797 mosfet | bs170 datasheet | tip41c | irfp460 | irfz44n mosfet | lm317t datasheet

 

 

↑ Back to Top
.