KTA1517 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SEMICONDUCTOR KTA1517 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES E L B L High Voltage VCEO=-120V. DIM MILLIMETERS Excellent hFE Linearity _ + 2.93 0.20 A B 1.30+0.20/-0.15 hFE(0.1mA)/hFE(2mA)=0.95(Typ.). C 1.30 MAX 2 High hFE hFE=200 700. 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 Low Noise NF=1dB(Typ.), 10dB(Max.). 1 G 1.90

SEMICONDUCTOR KTA1517S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES E L B L High Voltage VCEO=-120V. DIM MILLIMETERS Excellent hFE Linearity _ + A 2.93 0.20 B 1.30+0.20/-0.15 hFE(0.1mA)/hFE(2mA)=0.95(Typ.). C 1.30 MAX 2 3 D 0.40+0.15/-0.05 High hFE hFE=200 700. E 2.40+0.30/-0.20 Low Noise NF=1dB(Typ.), 10dB(Max.). 1

MCC KTA1504-O Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components KTA1504-Y CA 91311 Phone (818) 701-4933 KTA1504-GR Fax (818) 701-4939 Features Halogen free available upon request by adding suffix "-HF" PNP Silicon Complementary to KTC3875 Low Noise Epitaxial Transistors Epoxy meets UL 94 V-0 flammability rating Mo

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors KTA1504 TRANSISTOR (PNP) SOT 23 FEATURES Complementary to KTC3875 Low Noise Excellent hFE Linearity 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit V Collector-Base Voltage -50 V CBO V Collector

www.jscj-elec.com AD-KTA1505 series JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-KTA1505 series Plastic-Encapsulated Transistor AD-KTA1505 series Transistor (PNP) FEATURES Excellent hFE linearity Complementary to AD-KTC3876 AEC-Q101 qualified Version 1.0 1 / 6 2021-07-01 www.jscj-elec.com AD-KTA1505 series MAXIMUM RATINGS (T = 25 C unless otherwise spe

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 KTA1505 TRANSISTOR PNP FEATURES 1. BASE Excellent hFE linearity 2. EMITTER 3. COLLECTOR Complementary to KTC3876 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -35 V V Collector-Emitter Voltage -30 V CEO V

SEMICONDUCTOR KTA1531T TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW FREQUENCY POWER AMP, CONVERTER ELECTRONIC GOVERNOR APPLICATIONS E B FEATURES K DIM MILLIMETERS Low Saturation Voltage _ A 2.9 + 0.2 B 1.6+0.2/-0.1 VCE(sat)=0.3V(Max.) at IC=0.5A. _ C 0.70 + 0.05 2 3 Complementary to KTC3531T. _ D 0.4 + 0.1 E 2.8+0.2/-0.3 _ F 1.9 + 0.2 1 G 0.95 _ H 0.16 + 0.05

SEMICONDUCTOR KTA1532U TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR LOW FREQUENCY AMPLIFIER DRIVER FEATURES E A Collector Current is large. M B M DIM MILLIMETERS Collector Saturation Voltage is low. _ A 2.00 0.20 + D 2 VCE(sat) -200mV at IC=500mA, ID=-25mA. _ + B 1.25 0.15 _ + C 0.90 0.10 3 1 D 0.3+0.10/-0.05 _ E + 2.10 0.20 G 0.65 H 0.15+0.1/-0.06 J 1.30

SEMICONDUCTOR KTA1544T TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS AND STROBES APPLICATION. E B FEATURES K DIM MILLIMETERS Adoption of MBIT Processes. _ A 2.9 + 0.2 B 1.6+0.2/-0.1 Large Current Capacitance. _ C 0.70 + 0.05 2 3 Low Collector-to-Emitter Saturation Voltage. _ D 0.4 + 0.1 E 2.8+0.2/-0.3 High Speed Switching. _ F 1.

SEMICONDUCTOR KTA1535T TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS AND STROBES APPLICATION. E B FEATURES K DIM MILLIMETERS Adoption of MBIT Processes. _ A 2.9 + 0.2 B 1.6+0.2/-0.1 High Current Capacitance. _ C 0.70 + 0.05 2 3 Low Collector-to-Emitter Saturation Voltage. _ D 0.4 + 0.1 E 2.8+0.2/-0.3 High Speed Switching. _ F 1.9

SEMICONDUCTOR KTA1572 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR FEATURE Low Collector-Emitter Saturation Voltage VCE(sat). High Collector Current Capability IC and ICP. B D Higher Efficiency Leading to Less Heat Generation. DIM MILLIMETERS A 7.20 MAX B 5.20 MAX C 0.60 MAX P D 2.50 MAX MAXIMUM RATING (Ta=25 ) DEPTH 0.2 E 1.15 MAX F 1.27 C CHARACTERISTIC SYMBOL RATING UNIT

SEMICONDUCTOR KTA1520S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION. E L B L DIM MILLIMETERS MAXIMUM RATING (Ta=25 ) _ + 2.93 0.20 A B 1.30+0.20/-0.15 CHARACTERISTIC SYMBOL RATING UNIT C 1.30 MAX 2 3 D 0.45+0.15/-0.05 VCBO -120 V Collector-Base Voltage E 2.40+0.30/-0.20 1 G 1.90 VCEO -100 V Collector-Emitter Voltage H 0.95 J 0.13+0.10/-0.05 V

SEMICONDUCTOR KTA1551T TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS APPLICATION. E B FEATURES K DIM MILLIMETERS Adoption of MBIT Processes. _ A 2.9 + 0.2 B 1.6+0.2/-0.1 Large Current Capacitance. _ C 0.70 + 0.05 2 3 Low Collector-to-Emitter Saturation Voltage. _ D 0.4 + 0.1 E 2.8+0.2/-0.3 High-Speed Switching. _ F 1.9 + 0.2 1

SEMICONDUCTOR KTA1542T TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS, STROBES APPLICATION. E B FEATURES K DIM MILLIMETERS Adoption of MBIT Processes. _ A 2.9 + 0.2 B 1.6+0.2/-0.1 Large Current Capacitance. _ C 0.70 + 0.05 2 3 Low Collector-to-Emitter Saturation Voltage. _ D 0.4 + 0.1 E 2.8+0.2/-0.3 High-Speed Switching. _ F 1.9 +

SEMICONDUCTOR KTA1532T TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS APPLICATION. E B FEATURES K DIM MILLIMETERS Adoption of MBIT Processes. _ A 2.9 + 0.2 B 1.6+0.2/-0.1 Large Current Capacitance. _ C 0.70 + 0.05 2 3 Low Collector-to-Emitter Saturation Voltage. _ D 0.4 + 0.1 E 2.8+0.2/-0.3 High-Speed Switching. _ F 1.9 + 0.2 1

SEMICONDUCTOR KTA1504S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L FEATURES DIM MILLIMETERS Excellent hFE Linearity _ + A 2.93 0.20 B 1.30+0.20/-0.15 hFE(0.1mA)/hFE(2mA)=0.95(Typ.). C 1.30 MAX 2 3 D 0.40+0.15/-0.05 Low Noise NF=1dB(Typ.), 10dB(Max.). E 2.40+0.30/-0.20 1 Complementary to KTC3875S. G 1.9

SEMICONDUCTOR KTA1541T TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS AND STROBES APPLICATION. E B FEATURES K DIM MILLIMETERS Adoption of MBIT Processes. _ A 2.9 + 0.2 B 1.6+0.2/-0.1 Large Current Capacitance. _ C 0.70 + 0.05 2 3 Low Collector-to-Emitter Saturation Voltage. _ D 0.4 + 0.1 E 2.8+0.2/-0.3 High Speed Switching. _ F 1.

SEMICONDUCTOR KTA1552T TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR DC-DC CONVERTERS RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS, STROBES APPLICATION. E B FEATURES K DIM MILLIMETERS Adoption of FBET, MBIT Processes. _ A 2.9 + 0.2 B 1.6+0.2/-0.1 High Current Capacitance. _ C 0.70 + 0.05 2 3 Low Collector-to-Emitter Saturation Voltage. _ D 0.4 + 0.1 E 2.8+0.2/-0.3 High-Speed

SEMICONDUCTOR KTA1505S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES L B L DIM MILLIMETERS Excellent hFE Linearity _ + A 2.93 0.20 B 1.30+0.20/-0.15 hFE(2)=25(Min.) at VCE=-6V, IC=-400mA. C 1.30 MAX 2 Complementary to KTC3876S. 3 D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.0

SEMICONDUCTOR KTA1543T TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS, STROBES APPLICATION. E B FEATURES K DIM MILLIMETERS Adoption of MBIT Processes. _ A 2.9 + 0.2 B 1.6+0.2/-0.1 High Current Capacitance. _ C 0.70 + 0.05 2 3 Low Collector-to-Emitter Saturation Voltage. _ D 0.4 + 0.1 E 2.8+0.2/-0.3 High-Speed Switching. _ F 1.9 +

SEMICONDUCTOR KTA1553T TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS AND STROBES APPLICATION. E B FEATURES K DIM MILLIMETERS Adoption of MBIT Processes. _ A 2.9 + 0.2 B 1.6+0.2/-0.1 High Current Capacitance. _ C 0.70 + 0.05 2 3 Low Collector-to-Emitter Saturation Voltage. _ D 0.4 + 0.1 E 2.8+0.2/-0.3 Ultrasmall-Sized Package permit

SEMICONDUCTOR KTA1536T TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR RELAY DRIVERS, LAMP DRIVERS, MOTOR DRIVERS AND STROBES APPLICATION. E B FEATURES K DIM MILLIMETERS Adoption of MBIT Processes. _ A 2.9 + 0.2 B 1.6+0.2/-0.1 High Current Capacitance. _ C 0.70 + 0.05 2 3 Low Collector-to-Emitter Saturation Voltage. _ D 0.4 + 0.1 E 2.8+0.2/-0.3 High Speed Switching. _ F 1.9

SEMICONDUCTOR KTA1571S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR FEATURE Low Collector-Emitter Saturation Voltage VCE(sat). High Collector Current Capability IC and ICP. Higher Efficiency Leading to Less Heat Generation. E L B L DIM MILLIMETERS _ + A 2.93 0.20 MAXIMUM RATING (Ta=25 ) B 1.30+0.20/-0.15 C 1.30 MAX CHARACTERISTIC SYMBOL RATING UNIT 2 3 D 0.40+0.15/-0

KTA1505 SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Excellent hFE linearity hFE(2)=25(Min).at VCE=-6V,IC=-400mA Complementary to KTC3876 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -35 V Dimensions in inches and (millimeters) VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base

KTA1504 PNP General Purpose Transistors 3 P b Lead(Pb)-Free 1 2 SOT-23 MAXIMUM RATINGS(Ta=25 C) Rating Symbol Value Unit VCBO Collector-Base Voltage -50 V Collector-Emitter Voltage VCEO -50 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current - Continuous -150 mA Total Device Dissipation PD 150 mW TA=25 C Tj C Junction Temperature +150 Tstg Storage Temperature -5

KTA1505 PNP General Purpose Transistors 3 P b Lead(Pb)-Free 1 2 SOT-23 MAXIMUM RATINGS(TA=25 C) Rating Symbol Value Unit VCBO Collector-Base Voltage -35 V Collector-Emitter Voltage VCEO -30 V VEBO Emitter-Base Voltage -5.0 V IC Collector Current - Continuous -500 mA Total Device Dissipation PD 150 mW TA=25 C Tj C Junction Temperature +150 Tstg Storage Temperature -5

KTA1504 Rev.FApr.-2017 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features , , KTC3875 Excellent hFE linearity, low noise, complementary pair with KTC3875. / Applications General amplifier a

KTA1505 Rev.FApr.-2017 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features , KTC3876 Excellent hFE linearity, complementary pair with KTC3876. / Applications General amplifier and switching application.

SEMICONDUCTOR KTA1504LT1 Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR General purpose application Package SOT-23 * Complement to KTC3875LT1 * Collector Current Ic=-150mA * low noise NF=10db(max) ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating Unit Collector-Base Voltage Vcbo -50 V Collector-Emitter Voltag

SMD Type Transistors PNP Transistors KTA1504 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Excellent hFE Linearity Low Noise 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 Complementary to KTC3875 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector -

SMD Type Transistors PNP Transistors KTA1504S SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Excellent hFE Linearity hFE(0.1mA) / hFE(2mA)=0.95(Typ.). 1 2 Low Noise NF=1dB(Typ.), 10dB(Max.). +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 Complementary to KTC3875S. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Sy

SMD Type Transistors PNP Transistors KTA1505 (KTA1505S) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Excellent hFE Linearity Comlementary to KTC3876/KTC3876S 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -35 Collector

Plastic-Encapsulate Transistors FEATURES KTA1504(PNP) Complementary To KTC3875. FE Excellent H Linearity. Low noise. Maximum Ratings (TA=25 unless otherwise noted) Parameter Symbol Value Unit VCBO Collector-Base Voltage -50 V 1. BASE VCEO Collector-Emitter Voltage -50 V 2. EMITTER SOT-23 VEBO Emitter-Base Voltage -5 V 3. COLLECTO IC Collector Current -Continuo