KTA1662 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: KTA1662
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1 W
Tensión colector-emisor (Vce): 80 V
Corriente del colector DC máxima (Ic): 0.4 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 70
Paquete / Cubierta: SOT89
Búsqueda de reemplazo de transistor bipolar KTA1662
KTA1662 Datasheet (PDF)
kta1662.pdf
SEMICONDUCTOR KTA1662TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION. FEATURESAC1W (Mounted on Ceramic Substrate).HSmall Flat Package. GComplementary to KTC4374.DIM MILLIMETERSA 4.70 MAXD _+D B 2.50 0.20K C 1.70 MAXD 0.45+0.15/-0.10MAXIMUM RATING (Ta=25)F FE 4.25 MAX_+F 1.50 0.10CHARACTERISTIC SYMBOL RATING UNIT
kta1664-o.pdf
KTA1664-OMCCTMMicro Commercial ComponentsKTA1664-Y20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Low Collector Saturation VoltagePNP Silicon Execllent current-to-gain characteristicsEpitaxial Transistors Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See orderi
kta1663.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L KTA1663 TRANSISTOR (PNP) 1. BASE FEATURES High current applications 2. COLLECTOR Complementary to KTC4375 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage
kta1666.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L KTA1666 TRANSISTOR (PNP) 1. BASE FEATURES 2. COLLECTOR Complementary to KTC4379 Small Flat Package3. EMITTER Low Saturation Voltage Power Amplifier and Switching Application MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Co
kta1664.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L KTA1664 TRANSISTOR (PNP) 1. BASE FEATURES 2. COLLECTOR Complementary to KTC4376 Small Flat Package3. EMITTER High Current Application MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -35 V VCEO Collector-
kta1668.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate TransistorsSOT-89-3L KTA1668 TRANSISTOR(PNP)1. BASEFEATURES High voltage: VCEO=-60V2. COLLECTOR High transistors frequency3. EMITTERMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Em
kta1663.pdf
SEMICONDUCTOR KTA1663TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT APPLICATION. FEATURESAC1W (Mounted on Ceramic Substrate).HSmall Flat Package. GComplementary to KTC4375.DIM MILLIMETERSA 4.70 MAXD _+D B 2.50 0.20K C 1.70 MAXD 0.45+0.15/-0.10MAXIMUM RATING (Ta=25)F FE 4.25 MAX_+F 1.50 0.10CHARACTERISTIC SYMBOL RATING UNITG
kta1660.pdf
SEMICONDUCTOR KTA1660TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH VOLTAGE SWITCHING APPLICATION.FEATURES ACHigh Voltage : VCEO=-150V.HHigh Transition Frequency : fT=120MHz(Typ.).G1W (Monunted on Ceramic Substrate).Small Flat Package.DIM MILLIMETERSComplementary to KTC4372.A 4.70 MAXD _+D B 2.50 0.20K C 1.70 MAXD 0.45+0.15/-0.10F FE 4.25 MAX_+
kta1666.pdf
SEMICONDUCTOR KTA1666TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORPOWER AMPLIFIER APPLICATIONS.POWER SWITCHING APPLICATIONS. ACFEATURESH Low Saturation Voltage G: VCE(sat)=-0.5V(Max.) (IC=-1A) High Speed Switching Time : tstg=1.0 S(Typ.)DIM MILLIMETERS PC=1 2W (Mounted on Ceramic Substrate)A 4.70 MAXD _+D B 2.50 0.20 Small Flat Package.K C 1.70 MAXD 0.
kta1661.pdf
SEMICONDUCTOR KTA1661TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT APPLICATION.FEATURESACHigh Voltage : VCEO=-120V.HHigh Transition Frequency : fT=120MHz(Typ.).G1W(Monunted on Ceramic Substrate).Small Flat Package.DIM MILLIMETERSComplementary to KTC4373.A 4.70 MAXD _+D B 2.50 0.20K C 1.70 MAXD 0.45+0.15/-0.10F FE 4.25 MAX_+F 1.50 0.10
kta1664.pdf
SEMICONDUCTOR KTA1664TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT APPLICATION. FEATURESAC 1W (Mounted on Ceramic Substrate).H Small Flat Package. G Complementary to KTC4376.DIM MILLIMETERSA 4.70 MAXD _+D B 2.50 0.20K C 1.70 MAXD 0.45+0.15/-0.10MAXIMUM RATING (Ta=25 )F FE 4.25 MAX_+F 1.50 0.10CHARACTERISTIC SYMBOL RATING UNITG 0.40
kta1668.pdf
SEMICONDUCTOR KTA1668TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORVOLTAGE REGULATOR, RELAY, LAMP DRIVER, INDUSTRIAL USEACFEATURESHHigh Voltage : VCEO=-60V(Min.). GHigh Current : IC(Max.)=-1A.High Transition Frequency : fT=150MHz (Typ.).DIM MILLIMETERSWide Area of Safe Operation.A 4.70 MAXD _+D B 2.50 0.20Complementary to KTC4378.K C 1.70 MAXD 0.45+0.15/-
kta1663.pdf
KTA1663TRANSISTOR (PNP) SOT-89 FEATURES High current applications 1. BASE Complementary to KTC4375 2. COLLECTOR 1 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1.5 A PC Coll
kta1666.pdf
KTA1666TRANSISTOR (PNP) SOT-89-3L FEATURES 1. BASE Complementary to KTC4379 Small Flat Package2. COLLECTOR Low Saturation Voltage 3. EMITTER Power Amplifier and Switching Application MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V
kta1664.pdf
KTA1664TRANSISTOR (PNP) SOT-89-3L FEATURES 1. BASE Complementary to KTC4376 Small Flat Package2. COLLECTOR High Current Application 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -800 mA PC Collect
kta1668.pdf
KTA1668TRANSISTOR (PNP) SOT-89 FEATURES 1. BASE High voltage: VCEO=-60V High transistors frequency 2. COLLECTOR 1 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -1 A PC Collector power di
kta1663 sot-89.pdf
KTA1663 SOT-89 Transistor(PNP)1. BASE 2. COLLECTOR SOT-891 4.62 B4.41.63. EMITTER 1.81.43 1.4Features2.64.252.43.75 High current applications 0.8MIN Complementary to KTC4375 0.530.400.480.442x)0.13 B0.35 0.371.53.0MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Valu
kta1668 sot-89.pdf
KTA1668 SOT-89 Transistor(PNP)1. BASE 2. COLLECTOR 1 SOT-892 4.6B4.43. EMITTER 1.63 1.81.41.4Features2.64.252.43.75 High voltage: VCEO=-60V 0.8 High transistors frequency MIN0.530.400.480.44 2x)0.13 B0.35 0.371.5MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.0Symbol Parameter Value UnitsDimensions in inches and (mill
kta1663.pdf
KTA1663PNP Epitaxial Planar TransistorsP b Lead(Pb)-Free1. BASE2. COLLECTOR13. EMITTER23SOT-89ABSOLUTE MAXIMUM RATINGS (TA=25C)Rating Symbol Limits UnitVCBO VCollector-Base Voltage-35VCEOVCollector-Emitter Voltage -30VEBOVEmitter-Base Voltage -5.0Collector CurrentIC A-1.5Collector Power Dissipation PD 0.5 WTjJunction Temperature -55 to +150
kta1666.pdf
KTA1666PNP EPITAXIAL PLANAR TRANSISTORP b Lead(Pb)-Free1. BASE12. COLLECTOR233. EMITTERSOT-89ABSOLUTE MAXIMUM RATINGS(TaRating Symbol Value UnitVCBO-50 VCollector-Base VoltageVCEO-50 VCollector-Emitter VoltageVVEBO -5Emitter-Base VoltageICCollector Current-Continuous -2.0 APC0.5 WCollector Power DisspationJunction Temperature TJ 150 C-55 t
kta1664.pdf
KTA166 PNP Epitaxial Planar TransistorsP b Lead(Pb)-Free1. BASE2. COLLECTOR13. EMITTER23SOT-89ABSOLUTE MAXIMUM RATINGS (TA=25C)Rating Symbol Limits UnitVCBO VCollector-Base Voltage-35VCEOVCollector-Emitter Voltage -30VEBOVEmitter-Base Voltage -5.0Collector CurrentIC A-0.8Collector Power Dissipation PD 0.5 WTjJunction Temperature -55 to +150
kta1666.pdf
KTA1666 Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 PNP Silicon PNP transistor in a SOT-89 Plastic Package. / Features , KTC4379Low saturation voltage, high speed switching time, small flat package, Complementary to KTC4379. / Applications
kta1663.pdf
SMD Type TransistorsPNP TransistorsKTA16631.70 0.1 Features 1W (Mounted on Ceramic Substrate) Small Flat Package Comlementary to KTC43750.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -30 V Emitter - Base Voltage VEBO -
kta1660.pdf
SMD Type TransistorsPNP TransistorsKTA16601.70 0.1 Features High Voltage High Transition Frequency Complementary to KTC43720.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -150 Collector - Emitter Voltage VCEO -150 V Emitter - Base Voltage VEBO -5 Collect
kta1666.pdf
SMD Type TransistorsPNP TransistorsKTA16661.70 0.1 Features Small Flat Package Low Saturation Voltage0.42 0.10.46 0.1 Power Amplifier and Switching Application Comlementary to KTC43791.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO
kta1661.pdf
SMD Type TransistorsPNP TransistorsKTA16611.70 0.1 Features High Voltage High Transition Frequency Small Flat Package0.42 0.10.46 0.1 Complementary to KTC43731.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -120 V Emitter - Base
kta1664.pdf
SMD Type TransistorsPNP TransistorsKTA16641.70 0.1 Features 1W (Mounted on Ceramic Substrate) Small Flat Package0.42 0.10.46 0.1 Comlementary to KTC43761.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -35 Collector - Emitter Voltage VCEO -30 V Emitter - Base Voltage VEBO -
kta1668.pdf
SMD Type TransistorsPNP TransistorsKTA16681.70 0.1 Features High Voltage : VCEO=-60V(Min.). High Current : IC(Max.)=-1A. High Transition Frequency0.42 0.10.46 0.1 Complementary to KTC4378.1.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Collector - Emitter Voltage
kta1663o kta1663y.pdf
KTA1663PNP-Silicon General use Transistors0.8W 1.5A25V 4 ApplicationsCan be used for switching and amplifying in various 2 1 3SOT-89 electrical and electronic circuit. Maximum ratings Parameters Symbol Rating UnitV VCEO 25Collector-emitter voltage (IB=0) VCBO 30 VCollector-base voltageIE=0 VEBO 6 VEmitter-base voltageIC=0 IC 1.5 ACol
kta1661.pdf
KTA1661BIPOLAR TRANSISTOR (PNP)FEATURES Complementary to KTC4373 High Transition Frequency High Current Application High Voltage Surface Mount deviceSOT-89MECHANICAL DATA Case: SOT-89 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0 Weight: 0.055 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted
Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , TIP42 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050