KTB1368 Todos los transistores

SEMICONDUCTOR KTB1368 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A C FEATURES DIM MILLIMETERS S Good Linearity of hFE. _ A 10.0 + 0.3 _ + B 15.0 0.3 E Complementary to KTD2060. C _ 2.70 0.3 + D 0.76+0.09/-0.05 _ E 3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.3 G + H 0.5+0.1/-0.05 _ + J 13.6 0.5 L L MAXIMUM RATING (Ta=25 ) R K _ 3.7 0.2

SEMICONDUCTOR KTB1366 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A C FEATURES DIM MILLIMETERS S Low Collector Saturation Voltage _ A 10.0 + 0.3 _ + B 15.0 0.3 E VCE(sat)=-1.0V(Max.) at IC=-2A, IB=-0.2A. C _ 2.70 0.3 + D 0.76+0.09/-0.05 Collector Power Dissipation _ E 3.2 0.2 + PC=25W (Tc=25 ) _ F 3.0 0.3 + _ 12.0 0.3 G + Comple

SEMICONDUCTOR KTB1367 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A C FEATURES DIM MILLIMETERS S Low Collector-Emitter Saturation Voltage _ A 10.0 + 0.3 _ + B 15.0 0.3 E VCE(sat)=-2.0V(Max.). C _ 2.70 0.3 + D 0.76+0.09/-0.05 Complementary to KTD2059. _ E 3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.3 G + H 0.5+0.1/-0.05 _ + J 13.6 0.5 L

SEMICONDUCTOR KTB1369 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH VOLTAGE APPLICATION TV, MONITOR VERTICAL OUTPUT APPLICATION A C DRIVER STAGE APPLICATION DIM MILLIMETERS S COROR TV CLASS B SOUND OUTPUT APPLICATION _ A 10.0 0.3 + _ + B 15.0 0.3 E C _ 2.70 0.3 + D 0.76+0.09/-0.05 FEATURES _ E 3.2 0.2 + High Breakdown Voltage VCEO=-180V(Min.) _ F 3.0 0.3 +

isc Silicon PNP Power Transistor KTB1366 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO Collector Power Dissipation- P = 25 W@ T = 25 C C Low Collector Saturation Voltage- V = -1.0V(Max)@ (I = -2A, I = -0.2A) CE(sat) C B Complement to Type KTD2058 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATI

isc Silicon PNP Power Transistor KTB1367 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -100V(Min) (BR)CEO Collector Power Dissipation- P = 30W@ T = 25 C C Low Collector Saturation Voltage- V = -2.0V(Max)@ (I = -4A, I = -0.4A) CE(sat) C B Complement to Type KTD2059 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATI

isc Silicon PNP Power Transistor KTB1369 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -180V(Min) (BR)CEO Low Collector Saturation Voltage- V = -1.0V(Max)@ (I = -0.5A, I = -50mA) CE(sat) C B Complement to Type KTD2061 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High Voltage application TV, monitor verti