KTC1003 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SEMICONDUCTOR KTC1003TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORB/W TV HORIZONTAL DEFLECTION OUTPUT APPLICATION. ACDIM MILLIMETERSS_FEATURES A 10.0 + 0.3_+B 15.0 0.3ELarge Collector Current Capability. C _2.70 0.3+D 0.76+0.09/-0.05Large Collector Power Dissipation Capability._E 3.2 0.2+_F 3.0 0.3+_12.0 0.3G +H 0.5+0.1/-0.05_+J 1

isc Silicon NPN Power Transistor KTC1003DESCRIPTIONLarge Collector Current Capability-: I = 4A (Max)CCollector Power Dissipation-: P = 30W(Max)CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B/W TV horizontal deflection outputapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

SEMICONDUCTOR KTC1006TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORCB TRANSCEIVER TX DRIVER APPLICATION.B DFEATURES Recommended for Driver Stage Application ofAM 4W Transmitter.DIM MILLIMETERSP High Power Gain.DEPTH:0.2A 7.20 MAX Wide Area of Safe Operation. B 5.20 MAXCC 0.60 MAXSD 2.50 MAXQE 1.15 MAXKF 1.27G 1.70 MAXH 0.55 MAXFFMAXIMUM RATINGS (T

SEMICONDUCTOR KTC1008TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVOLTAGE REGULATOR, RELAY, RAMP DRIVER, INDUSTRIAL USEB CFEATURES High Voltage : VCEO=60V(Min.). High Current : IC(Max.)=1A.N DIM MILLIMETERS High Transition Frequency : fT=150MHz(Typ.).A 4.70 MAXEKB 4.80 MAX Wide Area of Safe Operation. GC 3.70 MAXD Complementary to KTA708.D 0.45E 1.00F 1

SEMICONDUCTOR KTC1027TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH VOLTAGE APPLICATION. B DFEATURE Complementary to KTA1023.DIM MILLIMETERSPDEPTH:0.2A 7.20 MAXB 5.20 MAXCC 0.60 MAXSMAXIMUM RATING (Ta=25 )D 2.50 MAXQE 1.15 MAXKCHA RACTERISTIC SYMBOL RATING UNITF 1.27G 1.70 MAXVCBOCollector-Base Voltage 120 VH 0.55 MAXFF_J 14.00 + 0.50V

SEMICONDUCTOR KTC1020TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION. BFEATURES Excellecnt hFE Linearity: hFE(2)=25Min. : VCE=6V, IC=400mA.DIM MILLIMETERSOA 3.20 MAX 1 Watt Amplifier Application.HM B 4.30 MAXC 0.55 MAX Complementary to KTA1021. _D 2.40 + 0.15E 1.27F 2.30C_+G 14.00 0.50H 0.60 MAXJ

SEMICONDUCTOR KTC1026TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH VOLTAGE APPLICATION. COLOR TV CLASS B SOUND OUTPUT APPLICATION.B DFEATURES High Voltage : VCEO=180V.DIM MILLIMETERSP High DC Current Gain.DEPTH:0.2A 7.20 MAXB 5.20 MAXCC 0.60 MAXSD 2.50 MAXQE 1.15 MAXKF 1.27G 1.70 MAXMAXIMUM RATINGS (Ta=25 )H 0.55 MAXFF_J 14.00 + 0.50CHAR

KTC1027WEITRONNPN TransistorP b Lead(Pb)-Free1. EMITTER2. COLLECTOR3. BASETO-92LMAXIMUM RATINGS (TA=25 unless otherwise noted)valueParameter Symbol UnitsCollector-Base Voltage VCBO 120 V 120 VCollector-Emitter Voltage VCEO 5 VEmitter-Base Voltage VEBO 0.8 ACollector Current -Continuous ICCollector Power Dissipation PC 0.75 WRJAThermal Resistance From

KTC1027 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92LM NPN Silicon NPN transistor in a TO-92LM Plastic Package. / Features KTA1023 Complementary pair with KTA1023. / Applications High voltage application. / Equivalent Circuit / Pinning 1 2 3 PIN

DIP Type TransistorsNPN TransistorsKTC1020TO-92M Unit:mm6.0 0.2 Features1.0 0.1 Excelent hFE Linearity 1 Watt Amplifier Application0.50 0.1 Complementary to KTA102121 31.50 3.0 0.11.60 (max)Emitter1.2.Collector3.Base4.0(min) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 35