KTC1003 - описание и поиск аналогов

 ..1. Size:449K  kec
 ktc1003.pdf 

SEMICONDUCTOR KTC1003 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR B/W TV HORIZONTAL DEFLECTION OUTPUT APPLICATION. A C DIM MILLIMETERS S _ FEATURES A 10.0 + 0.3 _ + B 15.0 0.3 E Large Collector Current Capability. C _ 2.70 0.3 + D 0.76+0.09/-0.05 Large Collector Power Dissipation Capability. _ E 3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.3 G + H 0.5+0.1/-0.05 _ + J 1

 ..2. Size:212K  inchange semiconductor
 ktc1003.pdf 

isc Silicon NPN Power Transistor KTC1003 DESCRIPTION Large Collector Current Capability- I = 4A (Max) C Collector Power Dissipation- P = 30W(Max) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B/W TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT

 8.1. Size:73K  kec
 ktc1006.pdf 

SEMICONDUCTOR KTC1006 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR CB TRANSCEIVER TX DRIVER APPLICATION. B D FEATURES Recommended for Driver Stage Application of AM 4W Transmitter. DIM MILLIMETERS P High Power Gain. DEPTH 0.2 A 7.20 MAX Wide Area of Safe Operation. B 5.20 MAX C C 0.60 MAX S D 2.50 MAX Q E 1.15 MAX K F 1.27 G 1.70 MAX H 0.55 MAX FF MAXIMUM RATINGS (T

 8.2. Size:74K  kec
 ktc1008.pdf 

SEMICONDUCTOR KTC1008 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VOLTAGE REGULATOR, RELAY, RAMP DRIVER, INDUSTRIAL USE B C FEATURES High Voltage VCEO=60V(Min.). High Current IC(Max.)=1A. N DIM MILLIMETERS High Transition Frequency fT=150MHz(Typ.). A 4.70 MAX E K B 4.80 MAX Wide Area of Safe Operation. G C 3.70 MAX D Complementary to KTA708. D 0.45 E 1.00 F 1

 9.1. Size:79K  kec
 ktc1027.pdf 

SEMICONDUCTOR KTC1027 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. B D FEATURE Complementary to KTA1023. DIM MILLIMETERS P DEPTH 0.2 A 7.20 MAX B 5.20 MAX C C 0.60 MAX S MAXIMUM RATING (Ta=25 ) D 2.50 MAX Q E 1.15 MAX K CHA RACTERISTIC SYMBOL RATING UNIT F 1.27 G 1.70 MAX VCBO Collector-Base Voltage 120 V H 0.55 MAX FF _ J 14.00 + 0.50 V

 9.2. Size:72K  kec
 ktc1020.pdf 

SEMICONDUCTOR KTC1020 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B FEATURES Excellecnt hFE Linearity hFE(2)=25Min. VCE=6V, IC=400mA. DIM MILLIMETERS O A 3.20 MAX 1 Watt Amplifier Application. H M B 4.30 MAX C 0.55 MAX Complementary to KTA1021. _ D 2.40 + 0.15 E 1.27 F 2.30 C _ + G 14.00 0.50 H 0.60 MAX J

 9.3. Size:89K  kec
 ktc1026.pdf 

SEMICONDUCTOR KTC1026 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE APPLICATION. COLOR TV CLASS B SOUND OUTPUT APPLICATION. B D FEATURES High Voltage VCEO=180V. DIM MILLIMETERS P High DC Current Gain. DEPTH 0.2 A 7.20 MAX B 5.20 MAX C C 0.60 MAX S D 2.50 MAX Q E 1.15 MAX K F 1.27 G 1.70 MAX MAXIMUM RATINGS (Ta=25 ) H 0.55 MAX FF _ J 14.00 + 0.50 CHAR

 9.4. Size:45K  wietron
 ktc1027.pdf 

KTC1027 WEITRON NPN Transistor P b Lead(Pb)-Free 1. EMITTER 2. COLLECTOR 3. BASE TO-92L MAXIMUM RATINGS (TA=25 unless otherwise noted) value Parameter Symbol Units Collector-Base Voltage VCBO 120 V 120 V Collector-Emitter Voltage VCEO 5 V Emitter-Base Voltage VEBO 0.8 A Collector Current -Continuous IC Collector Power Dissipation PC 0.75 W R JA Thermal Resistance From

 9.5. Size:1139K  blue-rocket-elect
 ktc1027.pdf 

KTC1027 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92LM NPN Silicon NPN transistor in a TO-92LM Plastic Package. / Features KTA1023 Complementary pair with KTA1023. / Applications High voltage application. / Equivalent Circuit / Pinning 1 2 3 PIN

 9.6. Size:1002K  kexin
 ktc1020.pdf 

DIP Type Transistors NPN Transistors KTC1020 TO-92M Unit mm 6.0 0.2 Features 1.0 0.1 Excelent hFE Linearity 1 Watt Amplifier Application 0.50 0.1 Complementary to KTA1021 2 1 3 1.50 3.0 0.1 1.60 (max) Emitter 1. 2.Collector 3.Base 4.0(min) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 35