KTC1006 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SEMICONDUCTOR KTC1006TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORCB TRANSCEIVER TX DRIVER APPLICATION.B DFEATURES Recommended for Driver Stage Application ofAM 4W Transmitter.DIM MILLIMETERSP High Power Gain.DEPTH:0.2A 7.20 MAX Wide Area of Safe Operation. B 5.20 MAXCC 0.60 MAXSD 2.50 MAXQE 1.15 MAXKF 1.27G 1.70 MAXH 0.55 MAXFFMAXIMUM RATINGS (T

SEMICONDUCTOR KTC1003TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORB/W TV HORIZONTAL DEFLECTION OUTPUT APPLICATION. ACDIM MILLIMETERSS_FEATURES A 10.0 + 0.3_+B 15.0 0.3ELarge Collector Current Capability. C _2.70 0.3+D 0.76+0.09/-0.05Large Collector Power Dissipation Capability._E 3.2 0.2+_F 3.0 0.3+_12.0 0.3G +H 0.5+0.1/-0.05_+J 1

SEMICONDUCTOR KTC1008TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVOLTAGE REGULATOR, RELAY, RAMP DRIVER, INDUSTRIAL USEB CFEATURES High Voltage : VCEO=60V(Min.). High Current : IC(Max.)=1A.N DIM MILLIMETERS High Transition Frequency : fT=150MHz(Typ.).A 4.70 MAXEKB 4.80 MAX Wide Area of Safe Operation. GC 3.70 MAXD Complementary to KTA708.D 0.45E 1.00F 1

isc Silicon NPN Power Transistor KTC1003DESCRIPTIONLarge Collector Current Capability-: I = 4A (Max)CCollector Power Dissipation-: P = 30W(Max)CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B/W TV horizontal deflection outputapplicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT