KTC1006 Todos los transistores

SEMICONDUCTOR KTC1006 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR CB TRANSCEIVER TX DRIVER APPLICATION. B D FEATURES Recommended for Driver Stage Application of AM 4W Transmitter. DIM MILLIMETERS P High Power Gain. DEPTH 0.2 A 7.20 MAX Wide Area of Safe Operation. B 5.20 MAX C C 0.60 MAX S D 2.50 MAX Q E 1.15 MAX K F 1.27 G 1.70 MAX H 0.55 MAX FF MAXIMUM RATINGS (T

SEMICONDUCTOR KTC1003 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR B/W TV HORIZONTAL DEFLECTION OUTPUT APPLICATION. A C DIM MILLIMETERS S _ FEATURES A 10.0 + 0.3 _ + B 15.0 0.3 E Large Collector Current Capability. C _ 2.70 0.3 + D 0.76+0.09/-0.05 Large Collector Power Dissipation Capability. _ E 3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.3 G + H 0.5+0.1/-0.05 _ + J 1

SEMICONDUCTOR KTC1008 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR VOLTAGE REGULATOR, RELAY, RAMP DRIVER, INDUSTRIAL USE B C FEATURES High Voltage VCEO=60V(Min.). High Current IC(Max.)=1A. N DIM MILLIMETERS High Transition Frequency fT=150MHz(Typ.). A 4.70 MAX E K B 4.80 MAX Wide Area of Safe Operation. G C 3.70 MAX D Complementary to KTA708. D 0.45 E 1.00 F 1

isc Silicon NPN Power Transistor KTC1003 DESCRIPTION Large Collector Current Capability- I = 4A (Max) C Collector Power Dissipation- P = 30W(Max) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for B/W TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT