KTC3204 Todos los transistores

SEMICONDUCTOR KTC3204 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURES B Complementary to KTA1272. DIM MILLIMETERS O A 3.20 MAX H M B 4.30 MAX C 0.55 MAX MAXIMUM RATING (Ta=25 ) _ D 2.40 + 0.15 E 1.27 CHARACTERISTIC SYMBOL RATING UNIT F 2.30 C _ + G 14.00 0.50 VCBO Collector-Base Voltage 35 V H 0.60 MAX J 1.05 E E VCEO Collecto

MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth KTC3205 Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features NPN Power Dissipation 1W (Tamb=25 ) Collector Current 2A Plastic-Encapsulate Collector-base Voltage 30V Epoxy meets UL 94 V-0 flammability rating Transistor Moisture Sensitivity Level 1 Ma

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors KTC3202 TRANSISTOR (NPN) TO-92 FEATURES 1. EMITTER General Purpose Application Switching Application 2. COLLECTOR 3. BASE Equivalent Circuit

SEMICONDUCTOR KTC3203 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. B C FEATURES Complementary to KTA1271. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX MAXIMUM RATING (Ta=25 ) G C 3.70 MAX D D 0.45 CHARACTERISTIC SYMBOL RATING UNIT E 1.00 F 1.27 VCBO Collector-Base Voltage 35 V G 0.85 H 0.45 VCEO Collector-Emitter Voltage 30 V _ H J 14.

SEMICONDUCTOR KTC3200 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AUDIO AMPLIFIER APPLICATION. B C FEATURES The KTC3200 is a transistor for low frequency and low noise applications. This device is designed to ower noise figure in the region of low signal source impedance, and to lower the pulse noise. N DIM MILLIMETERS This is recommended for the first stages of equalizer

SEMICONDUCTOR KTC3203A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURES B C Complementary to KTA1271A N DIM MILLIMETERS A 4.70 MAX MAXIMUM RATING (Ta=25 ) E K B 4.80 MAX G C 3.70 MAX CHARACTERISTIC SYMBOL RATING UNIT D D 0.45 E 1.00 VCBO Collector-Base Voltage 35 V F 1.27 G 0.85 VCEO Collector-Emitter Voltage 30 V H 0.45 _ H J 14.

SEMICONDUCTOR KTC3207 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE SWITCHING APPLICATION. COLOR TV HORIZONTAL DIRVER APPLICATION. B D COLOR TV CHROMA OUTPUT APPLICATION. FEATURES DIM MILLIMETERS P High Voltage V(BR)CEO=300V. DEPTH 0.2 A 7.20 MAX Small Collector Output Capacitance Cob=3.0pF(Typ.). B 5.20 MAX C C 0.60 MAX S D 2.50 MAX Q E 1.15 MAX K F 1.27 G

SEMICONDUCTOR KTC3207T TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE SWITCHING APPLICATION. COLOR TV HORIZONTAL DRIVER APPLICATION. COLOR TV CHROMA OUTPUT APPLICATION. E B K DIM MILLIMETERS FEATURES _ A 2.9 + 0.2 B 1.6+0.2/-0.1 High Voltage V(BR)CEO=300V _ C 0.70 + 0.05 2 3 Small Collector Output Capacitance Cob=3.0pF(Typ.) _ D 0.4 + 0.1 E 2.8+0.2/-0.3 Comp

SEMICONDUCTOR KTC3202 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C FEATURES Excellent hFE Linearity hFE(2)=25(Min.) at VCE=6V, IC=400mA. N DIM MILLIMETERS Complementary to KTA1270. A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 MAXIMUM RATING (Ta=25 ) H 0.45 _ H J 14.00 + 0.50 CHARACTERI

SEMICONDUCTOR KTC3209 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. FEATURES Low Collector Saturation Voltage VCE(sat)=0.5V(Max.) (IC=1A) High Speed Switching Time tstg=1.0 S(Typ.) Complementary to KTA1281. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emi

SEMICONDUCTOR KTC3205 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. B D FEATURES Complementary to KTA1273. DIM MILLIMETERS P DEPTH 0.2 A 7.20 MAX B 5.20 MAX C C 0.60 MAX S MAXIMUM RATING (Ta=25 ) D 2.50 MAX Q E 1.15 MAX K CHARACTERISTIC SYMBOL RATING UNIT F 1.27 G 1.70 MAX VCBO Collector-Base Voltage 30 V H 0.55 MAX FF _ J 14.00 + 0.50 VCE

SEMICONDUCTOR KTC3206 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR BLACK AND WHITE TV VIDEO OUTPUT APLICATION. HIGH VOLTAGE SWITCHING APPLICATION. B D FEATURES High Breakdown Voltage VCEO=150V(Min.). DIM MILLIMETERS P Low Output Capacitance Cob=5.0pF(Max.). DEPTH 0.2 A 7.20 MAX High Transition Frequency fT=120MHz(Typ.). B 5.20 MAX C C 0.60 MAX S D 2.50 MAX Q E 1.15 MA

KTC3205 TRANSISTOR (NPN) TO-92L 1. EMITTER FEATURES 2. COLLECTOR Complementary to KTA1273 3. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units 1 2 3 VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 2 A PC Collector Power Dissipation 1 W TJ Juncti

KTC3203(NPN) TO-92 Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Complementary to KTA1271 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 800 mA PC 625 mW Collector Power Dissipation Dimen

KTC3205 TO-92L Transistor (NPN) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 4.700 2 3 5.100 1 Features 7.800 8.200 Complementary to KTA1273 0.600 0.800 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units 0.350 0.550 13.800 VCBO Collector-Base Voltage 30 V 14.200 VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collec

KTC3202(NPN) TO-92 Transistors TO-92 1. EMITTER 2. COLLECTOR 3. BASE Features General purpose application switching application MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value Units VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 500 mA PC 625 mW Collector Po

KTC3206 TO-92L Transistor (NPN) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 4.700 5.100 2 3 1 Features 7.800 High Breakdown Voltage VCEO=150V(Min.) 8.200 Low Output Capacitance Cob=5.0pF(Max.) 0.600 High Transition Frequency fT=120MHz(Typ.). 0.800 0.350 0.550 MAXIMUM RATINGS (TA=25 unless otherwise noted) 13.800 14.200 Symbol Value Units Parameter

KTC3200 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features h , FE Low noise, high hFE, high breakdown voltage. / Applications Low noise audio amplifier application. / Equivalent Ci

DIP Type Transistors NPN Transistors KTC3202 Unit mm TO-92 4.8 0.3 3.8 0.3 Features Excellent hFE Linearity Complementary to KTA1270 0.60 Max 0.45 0.1 0.5 2 1 3 1.Emitter 2.Collector 1.27 2.54 3.Base Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 35 Collector - Emitter Voltage VCEO 30 V Emitter -

DIP Type Transistors NPN Transistors KTC3209 TO-92L Unit mm 4.9 0.2 0.7 0.1 Features Low Saturation Voltage 0.45 0.1 High Speed Switching Time Complementary to KTA1281 2 1 3 1.27 2.54 0.1 1.60 (max) Emitter 1. 2.Collector 3.Base 4.0(min) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50

DIP Type Transistors NPN Transistors KTC3206 TO-92L Unit mm 4.9 0.2 Features 0.7 0.1 High Breakdown Voltage High Transition Frequency 0.45 0.1 Complementary to KTA1024 2 1 3 1.27 2.54 0.1 1.60 (max) Emitter 1. 2.Collector 3.Base 4.0(min) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 200