KTC3467 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SEMICONDUCTOR KTC3467TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH-DEFINITION CRT DISPLAYVIDEO OUTPUT APPLICATION.B DFEATURES High Voltage : VCEO=200V. DIM MILLIMETERSP High Transition Frequency : fT=150MHz(Typ.).DEPTH:0.2A 7.20 MAX Low Collector Output Capacitance : Cob=1.7pF(Typ.). B 5.20 MAXCC 0.60 MAXS Complementary to KTA1070.D 2.50 MAXQE 1.15 MAX

DIP Type TransistorsNPN TransistorsKTC3467TO-92LUnit:mm4.9 0.20.7 0.1 Features0.45 0.1 High Voltage and High fT Low Collector Output Capacitance21 3 Complementary to KTA10701.27 2.54 0.11.60 (max)Emitter1.2.Collector3.Base4.0(min) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage V

SEMICONDUCTOR KTC3400TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORDIFFERENTIAL AMP. APPLICATION.B CFEATURES Matched Pairs for Differential Amplifiers. High Breakdown Voltage : VCEO=120V(Min.). Low Noise : NF=1dB(Typ.), 10dB(Max.).N DIM MILLIMETERS Complementary to KTA2400.A 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85MAXIMUM RATING (Ta=25 )

SEMICONDUCTOR KTC3423TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORAUDIO FREQUENCY AMPLIFIER APPLICATION. ABDCEFEATURESFHigh Breakdown Voltage : VCEO=150V(Min.).Low Output Capacitance : Cob=5.0pF(Max.).GHigh Transition Frequency : fT=120MHz(Typ.).HComplementary to KTA1360.DIM MILLIMETERSJA 8.3 MAXKB 5.8LC 0.7_+D 3.2 0.1E 3.5_+F 11.0 0.