KTC3467 - описание и поиск аналогов

SEMICONDUCTOR KTC3467 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH-DEFINITION CRT DISPLAY VIDEO OUTPUT APPLICATION. B D FEATURES High Voltage VCEO=200V. DIM MILLIMETERS P High Transition Frequency fT=150MHz(Typ.). DEPTH 0.2 A 7.20 MAX Low Collector Output Capacitance Cob=1.7pF(Typ.). B 5.20 MAX C C 0.60 MAX S Complementary to KTA1070. D 2.50 MAX Q E 1.15 MAX

DIP Type Transistors NPN Transistors KTC3467 TO-92L Unit mm 4.9 0.2 0.7 0.1 Features 0.45 0.1 High Voltage and High fT Low Collector Output Capacitance 2 1 3 Complementary to KTA1070 1.27 2.54 0.1 1.60 (max) Emitter 1. 2.Collector 3.Base 4.0(min) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage V

SEMICONDUCTOR KTC3400 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR DIFFERENTIAL AMP. APPLICATION. B C FEATURES Matched Pairs for Differential Amplifiers. High Breakdown Voltage VCEO=120V(Min.). Low Noise NF=1dB(Typ.), 10dB(Max.). N DIM MILLIMETERS Complementary to KTA2400. A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 MAXIMUM RATING (Ta=25 )

SEMICONDUCTOR KTC3423 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR AUDIO FREQUENCY AMPLIFIER APPLICATION. A B D C E FEATURES F High Breakdown Voltage VCEO=150V(Min.). Low Output Capacitance Cob=5.0pF(Max.). G High Transition Frequency fT=120MHz(Typ.). H Complementary to KTA1360. DIM MILLIMETERS J A 8.3 MAX K B 5.8 L C 0.7 _ + D 3.2 0.1 E 3.5 _ + F 11.0 0.