KTC3875 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

KTC3875 0.15A , 60V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES High hFE A L Low noise 3 3 Complementary to KTA1504 Top View C B 1 1 2 CLASSIFICATION OF hFE 2 K E Product-Rank KTC3875-O KTC3875-Y KTC3875-GR KTC3875-BL D Range 70 140 120 240 200 400 350

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors SOT-23 KTC3875 TRANSISTOR (NPN) FEATURES High hFE 1. BASE Low noise 2. EMITTER 3. COLLECTOR Complementary to KTA1504 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 50

KTC3875 TRANSISTOR (NPN) SOT-23 FEATURES High hFE Low noise 1. BASE Complementary to KTA1504 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissip

KTC3875 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features High hFE hFE=70-700 Low noise NF=1dB(Typ),10dB(Max) Complementary to KTA1504 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base V

KTC3875 COLLECTOR Plastic-Encapsulate Transistors 3 NPN Silicon 1 BASE 2 SOT-23 EMITTER (Ta=25 C) MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage V CEO 50 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 5.0 Vdc Collector Current -Continuous IC mAdc 150 THERMAL CHARACTERISTICS Characteristics Symbol Value Unit (1) Total Device Dissi

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 KTC3875 TRANSISTOR (NPN) FEATURES High hFE 1. BASE 2. EMITTER Low noise 3. COLLECTOR Complementary to KTA1504 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEB

SMD Type Transistors NPN Transistors KTC3875 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features High hFE Low noise 1 2 +0.1 +0.05 Complementary to KTA1504 0.95 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage V

KTC3875 BIPOLAR TRANSISTOR (NPN) FEATURES Complementary to KTA1504 High h FE Low Noise Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbol Value Unit Collector-Ba

MCC Micro Commercial Components TM KTC3875-Y 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 KTC3875-GR Phone (818) 701-4933 Fax (818) 701-4939 Features High hFE and Low Noise Epitaxial Planar Complementary to KTA1504 Lead Free Finish/Rohs Compliant ("P"Suffix designates NPN Transistors RoHS Compliant. See ordering information) Ha

SEMICONDUCTOR KTC3875S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L FEATURES DIM MILLIMETERS _ + A 2.93 0.20 Excellent hFE Linearity B 1.30+0.20/-0.15 hFE(0.1mA)/hFE(2mA)=0.95(Typ.). C 1.30 MAX 2 3 D 0.40+0.15/-0.05 High hFE hFE=70 700. E 2.40+0.30/-0.20 1 G 1.90 Low Noise NF=1dB(Typ.), 10dB(Max.).

SEMICONDUCTOR KTC3875LT1 Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR General purpose application Package SOT-23 * Complement to KTA1504LT1 * Collector Current Ic=150mA * low noise NF=10db(max) ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating Unit Collector-Base Voltage Vcbo 60 V Collector-Emitter Voltage

KTC3875S NPN Silicon Epitaxial Planar Transistor For switching and AF amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. 1.Base 2.Emitter 3.Collector O SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 C) Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 50 V Emitter