KTC4075 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SEMICONDUCTOR KTC4075 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEAUTRES M B M DIM MILLIMETERS Excellent hFE Linearity _ + A 2.00 0.20 D hFE(0.1mA)/hFE(2mA)=0.95(Typ.). 2 _ + B 1.25 0.15 _ High hFE hFE=70 700. + C 0.90 0.10 3 1 D 0.3+0.10/-0.05 Low Noise NF=1dB(Typ.), 10dB(Max.). _ + E 2.10 0.2

KTC4075 TRANSISTOR (NPN) SOT-23 FEATURES 1. BASE 2. EMITTER 3. COLLECTOR Excellent hFE linearity High hFE Low Noise Complementary to KTA2014 MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO 60 V Collector-Base Voltage VCEO 50 V Collector-Emitter Voltage VEBO 5 V Emitter-Base Voltage IC Collector Current -Continuous 15

KTC4075 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Excellent hFE linearity High hFE Low Noise Complementary to KTA2014 Dimensions in inches and (millimeters) MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO 60 V Collector-Base Voltage VCEO 50 V Collector-Emitter Voltage VEBO 5 V Emitter-Base Volta

SMD Type Transistors NPN Transistors KTC4075 Features Excellent hFE Linearity Low Noise Complementary to KTA2014 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 150 mA Bas

KTC4075-O MCC KTC4075-Y Micro Commercial Components TM 20736 Marilla Street Chatsworth KTC4075-GR Micro Commercial Components CA 91311 Phone (818) 701-4933 KTC4075-BL Fax (818) 701-4939 Features NPN Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Plastic-Encapsulate Complementary to KTA2014 Epoxy meets UL 94 V-0

SEMICONDUCTOR KTC4075V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B Excellent hFE Linearity hFE(0.1mA)/hFE(2mA)=0.95(Typ.). DIM MILLIMETERS 2 _ High hFE hFE=70 700. A 1.2 +0.05 _ B 0.8 +0.05 Low Noise NF=1dB(Typ.), 10dB(Max.). 1 3 _ C 0.5 + 0.05 _ D 0.3 + 0.05 Complementary to KTA2014V. _ E

SEMICONDUCTOR KTC4075E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B DIM MILLIMETERS Excellent hFE Linearity _ + A 1.60 0.10 D hFE(0.1mA)/hFE(2mA)=0.95(Typ.). _ + 2 B 0.85 0.10 _ + C 0.70 0.10 Low Noise NF=1dB(Typ.), 10dB(Max.). 3 1 D 0.27+0.10/-0.05 _ Complementary to KTA2014E. E 1.60 0.10 +

SEMICONDUCTOR KTC4075F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E Excellent hFE Linearity B hFE(0.1mA)/hFE(2mA)=0.95(Typ.). High hFE hFE=70 700. Low Noise NF=1dB(Typ.), 10dB(Max.). DIM MILLIMETERS 2 _ A 0.6 + 0.05 Complementary to KTA2014F. 3 _ + B 0.8 0.05 C 0.38+0.02/-0.04 1 Thin Fine Pitc