Биполярный транзистор KTC4075 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: KTC4075
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.1 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 0.15 A
Предельная температура PN-перехода (Tj): 175 °C
Статический коэффициент передачи тока (hfe): 70
KTC4075 Datasheet (PDF)
ktc4075.pdf
SEMICONDUCTOR KTC4075TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EFEAUTRESM B MDIM MILLIMETERSExcellent hFE Linearity _+A 2.00 0.20D: hFE(0.1mA)/hFE(2mA)=0.95(Typ.).2_+B 1.25 0.15_High hFE : hFE=70700.+C 0.90 0.1031D 0.3+0.10/-0.05Low Noise : NF=1dB(Typ.), 10dB(Max.)._+E 2.10 0.2
ktc4075.pdf
KTC4075TRANSISTOR (NPN) SOT-23 FEATURES 1. BASE 2. EMITTER 3. COLLECTOR Excellent hFE linearity High hFE Low Noise Complementary to KTA2014 MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO 60 VCollector-Base Voltage VCEO 50 VCollector-Emitter Voltage VEBO 5 VEmitter-Base Voltage IC Collector Current -Continuous 15
ktc4075.pdf
KTC4075 SOT-23 Transistor(NPN)SOT-231. BASE 2. EMITTER 3. COLLECTOR Features Excellent hFE linearity High hFE Low Noise Complementary to KTA2014 Dimensions in inches and (millimeters)MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO 60 VCollector-Base Voltage VCEO 50 VCollector-Emitter Voltage VEBO 5 VEmitter-Base Volta
ktc4075.pdf
SMD Type TransistorsNPN TransistorsKTC4075 Features Excellent hFE Linearity Low Noise Complementary to KTA20141.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 150mA Bas
ktc4075-bl-gr-y-o.pdf
KTC4075-OMCCKTC4075-YMicro Commercial ComponentsTM20736 Marilla Street ChatsworthKTC4075-GRMicro Commercial ComponentsCA 91311Phone: (818) 701-4933KTC4075-BLFax: (818) 701-4939FeaturesNPN Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)Plastic-Encapsulate Complementary to KTA2014 Epoxy meets UL 94 V-0
ktc4075v.pdf
SEMICONDUCTOR KTC4075VTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. EFEATURESBExcellent hFE Linearity: hFE(0.1mA)/hFE(2mA)=0.95(Typ.).DIM MILLIMETERS2_High hFE : hFE=70~700. A 1.2 +0.05_B 0.8 +0.05Low Noise : NF=1dB(Typ.), 10dB(Max.). 13_C 0.5 + 0.05_D 0.3 + 0.05Complementary to KTA2014V._E
ktc4075e.pdf
SEMICONDUCTOR KTC4075ETECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. EFEATURESBDIM MILLIMETERSExcellent hFE Linearity_+A 1.60 0.10D: hFE(0.1mA)/hFE(2mA)=0.95(Typ.). _+2 B 0.85 0.10_+C 0.70 0.10Low Noise : NF=1dB(Typ.), 10dB(Max.).31D 0.27+0.10/-0.05_Complementary to KTA2014E. E 1.60 0.10+
ktc4075f.pdf
SEMICONDUCTOR KTC4075FTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURESEExcellent hFE LinearityB: hFE(0.1mA)/hFE(2mA)=0.95(Typ.).High hFE : hFE=70~700.Low Noise : NF=1dB(Typ.), 10dB(Max.). DIM MILLIMETERS2_A 0.6 + 0.05Complementary to KTA2014F.3 _+B 0.8 0.05C 0.38+0.02/-0.041Thin Fine Pitc
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: ZTX869 | P702
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050