KTC4370 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SEMICONDUCTOR KTC4370/ATECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH VOLTAGE APPLICATION.ACFEATURESDIM MILLIMETERSSHigh Transition Frequency : fT=100MHz(Typ.)._A 10.0 + 0.3_+B 15.0 0.3EComplementary to KTA1659/A.C _2.70 0.3+D 0.76+0.09/-0.05_E 3.2 0.2+_F 3.0 0.3+_12.0 0.3G +H 0.5+0.1/-0.05_+J 13.6 0.5L LMAXIMUM RATING (T

SEMICONDUCTOR KTC4370/ATECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH VOLTAGE APPLICATION.ACFEATURESDIM MILLIMETERSSHigh Transition Frequency : fT=100MHz(Typ.)._A 10.0 + 0.3_+B 15.0 0.3EComplementary to KTA1659/A.C _2.70 0.3+D 0.76+0.09/-0.05_E 3.2 0.2+_F 3.0 0.3+_12.0 0.3G +H 0.5+0.1/-0.05_+J 13.6 0.5L LMAXIMUM RATING (T

DIP Type TransistorsNPN TransistorsKTC4370Unit: mmTO-220F0.200.200.202.540.200.70 Features High Transition Frequency Complementary to KTA16590.202.761.47max0.200.500.200.801. Base2.54typ2. Collector2.54typ3. Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 160

isc Silicon NPN Power Transistor KTC4370DESCRIPTIONHigh Collector-Emitter Breakdown VoltageV = 160V(Min)CEOComplement to Type KTA1659Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 160 VCBO

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate TransistorsTO 220F KTC4370A TRANSISTOR (NPN)1. BASEFEATURES 2. COLLECTOR High Transition Frequency Complementary to KTA1659A3. EMITTER High Voltage Application Equivalent Circuit KTC4370A=Device code Solid dot=Green moldinn compound device, if none,the normal deviceXXXX=Code

DIP Type TransistorsNPN TransistorsKTC4370AUnit: mmTO-220F0.200.200.202.540.200.70 Features High Transition Frequency Complementary to KTA1659A0.202.761.47max0.200.500.200.801. Base2.54typ2. Collector2.54typ3. Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 1

isc Silicon NPN Power Transistor KTC4370ADESCRIPTIONHigh Collector-Emitter Breakdown VoltageV = 180V(Min)CEOComplement to Type KTA1659AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 180 VCBO