KTC4370 - описание и поиск аналогов

SEMICONDUCTOR KTC4370/A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. A C FEATURES DIM MILLIMETERS S High Transition Frequency fT=100MHz(Typ.). _ A 10.0 + 0.3 _ + B 15.0 0.3 E Complementary to KTA1659/A. C _ 2.70 0.3 + D 0.76+0.09/-0.05 _ E 3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.3 G + H 0.5+0.1/-0.05 _ + J 13.6 0.5 L L MAXIMUM RATING (T

SEMICONDUCTOR KTC4370/A TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. A C FEATURES DIM MILLIMETERS S High Transition Frequency fT=100MHz(Typ.). _ A 10.0 + 0.3 _ + B 15.0 0.3 E Complementary to KTA1659/A. C _ 2.70 0.3 + D 0.76+0.09/-0.05 _ E 3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.3 G + H 0.5+0.1/-0.05 _ + J 13.6 0.5 L L MAXIMUM RATING (T

DIP Type Transistors NPN Transistors KTC4370 Unit mm TO-220F 0.20 0.20 0.20 2.54 0.20 0.70 Features High Transition Frequency Complementary to KTA1659 0.20 2.76 1.47max 0.20 0.50 0.20 0.80 1. Base 2.54typ 2. Collector 2.54typ 3. Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 160

isc Silicon NPN Power Transistor KTC4370 DESCRIPTION High Collector-Emitter Breakdown Voltage V = 160V(Min) CEO Complement to Type KTA1659 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 160 V CBO

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate Transistors TO 220F KTC4370A TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR High Transition Frequency Complementary to KTA1659A 3. EMITTER High Voltage Application Equivalent Circuit KTC4370A=Device code Solid dot=Green moldinn compound device, if none,the normal device XXXX=Code

DIP Type Transistors NPN Transistors KTC4370A Unit mm TO-220F 0.20 0.20 0.20 2.54 0.20 0.70 Features High Transition Frequency Complementary to KTA1659A 0.20 2.76 1.47max 0.20 0.50 0.20 0.80 1. Base 2.54typ 2. Collector 2.54typ 3. Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 1

isc Silicon NPN Power Transistor KTC4370A DESCRIPTION High Collector-Emitter Breakdown Voltage V = 180V(Min) CEO Complement to Type KTA1659A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 180 V CBO