Биполярный транзистор KTC4370
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: KTC4370
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 20
W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 160
V
Макcимальный постоянный ток коллектора (Ic): 1.5
A
Предельная температура PN-перехода (Tj): 175
°C
Статический коэффициент передачи тока (hfe): 70
Корпус транзистора:
TO220F
Аналоги (замена) для KTC4370
KTC4370
Datasheet (PDF)
..1. Size:456K kec
ktc4370 ktc4370a.pdf 
SEMICONDUCTOR KTC4370/ATECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH VOLTAGE APPLICATION.ACFEATURESDIM MILLIMETERSSHigh Transition Frequency : fT=100MHz(Typ.)._A 10.0 + 0.3_+B 15.0 0.3EComplementary to KTA1659/A.C _2.70 0.3+D 0.76+0.09/-0.05_E 3.2 0.2+_F 3.0 0.3+_12.0 0.3G +H 0.5+0.1/-0.05_+J 13.6 0.5L LMAXIMUM RATING (T
..2. Size:456K kec
ktc4370 a.pdf 
SEMICONDUCTOR KTC4370/ATECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH VOLTAGE APPLICATION.ACFEATURESDIM MILLIMETERSSHigh Transition Frequency : fT=100MHz(Typ.)._A 10.0 + 0.3_+B 15.0 0.3EComplementary to KTA1659/A.C _2.70 0.3+D 0.76+0.09/-0.05_E 3.2 0.2+_F 3.0 0.3+_12.0 0.3G +H 0.5+0.1/-0.05_+J 13.6 0.5L LMAXIMUM RATING (T
..3. Size:408K kexin
ktc4370.pdf 
DIP Type TransistorsNPN TransistorsKTC4370Unit: mmTO-220F0.200.200.202.540.200.70 Features High Transition Frequency Complementary to KTA16590.202.761.47max0.200.500.200.801. Base2.54typ2. Collector2.54typ3. Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 160
..4. Size:217K inchange semiconductor
ktc4370.pdf 
isc Silicon NPN Power Transistor KTC4370DESCRIPTIONHigh Collector-Emitter Breakdown VoltageV = 160V(Min)CEOComplement to Type KTA1659Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 160 VCBO
0.1. Size:551K jiangsu
ktc4370a.pdf 
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-220F Plastic-Encapsulate TransistorsTO 220F KTC4370A TRANSISTOR (NPN)1. BASEFEATURES 2. COLLECTOR High Transition Frequency Complementary to KTA1659A3. EMITTER High Voltage Application Equivalent Circuit KTC4370A=Device code Solid dot=Green moldinn compound device, if none,the normal deviceXXXX=Code
0.2. Size:407K kexin
ktc4370a.pdf 
DIP Type TransistorsNPN TransistorsKTC4370AUnit: mmTO-220F0.200.200.202.540.200.70 Features High Transition Frequency Complementary to KTA1659A0.202.761.47max0.200.500.200.801. Base2.54typ2. Collector2.54typ3. Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 1
0.3. Size:216K inchange semiconductor
ktc4370a.pdf 
isc Silicon NPN Power Transistor KTC4370ADESCRIPTIONHigh Collector-Emitter Breakdown VoltageV = 180V(Min)CEOComplement to Type KTA1659AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 180 VCBO
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