KTD1352 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: KTD1352

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 30 W

Tensión colector-emisor (Vce): 80 V

Corriente del colector DC máxima (Ic): 4 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 40

Encapsulados: TO220

 Búsqueda de reemplazo de KTD1352

- Selecciónⓘ de transistores por parámetros

 

KTD1352 datasheet

 9.1. Size:244K  secos
ktd1304.pdf pdf_icon

KTD1352

KTD1304 0.3 A, 25 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES High emitter-base voltage VEBO=12V(Min) low on resistance Ron=0.6 (max)(IB=1mA) PACKAGE DIMENSIONS SOT-23 Collector 3 Dim Min Max A 2.800 3.040 1 Base B 1.200 1.400 2 Emitter C 0.890 1.110 D

 9.2. Size:496K  kec
ktd1303.pdf pdf_icon

KTD1352

SEMICONDUCTOR KTD1303 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR AUDIO MUTING APPLICATION. FEATURES B High Emitter-Base Voltage VEBO=12V(Min.). High Reverse hFE Reverse hFE=20(Min.) (VCE=2V, IC=4mA). DIM MILLIMETERS O A 3.20 MAX Low on Resistance RON=0.6 (Typ.) (IB=1mA). H M B 4.30 MAX C 0.55 MAX _ D 2.40 + 0.15 E 1.27 F 2.30 C _ + G 14.00 0.50 H 0.60 MAX

 9.3. Size:70K  kec
ktd1302.pdf pdf_icon

KTD1352

SEMICONDUCTOR KTD1302 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR AUDIO MUTING APPLICATION. B C FEATURES High Emitter-Base Voltage VEBO=12V(Min.). High Reverse hFE Reverse hFE=20(Min.) (VCE=2V, IC=4mA). N DIM MILLIMETERS Low on Resistance RON=0.6 (Typ.) (IB=1mA). A 4.70 MAX E K B 4.80 MAX G C 3.70 MAX D D 0.45 E 1.00 F 1.27 G 0.85 MAXIMUM RATING (Ta=25 ) H 0.45

 9.4. Size:354K  kec
ktd1304.pdf pdf_icon

KTD1352

SEMICONDUCTOR KTD1304 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR AUDIO MUTING APPLICATION. FEATURES E L B L High Emitter-Base Voltage VEBO=12V(Min.). DIM MILLIMETERS High Reverse hFE _ + A 2.93 0.20 B 1.30+0.20/-0.15 Reverse hFE=20(Min.) (VCE=2V, IC=4mA). C 1.30 MAX 2 3 D 0.40+0.15/-0.05 Low on Resistance RON=0.6 (Max.) (IB=1mA). E 2.40+0.30/-0.20 1 G 1.90

Otros transistores... KTD1028, KTD1047, KTD1145, KTD1146, KTD1302, KTD1303, KTD1304, KTD1351, BD140, KTD1413, KTD1414, KTD1415, KTD1937, KTD2058, KTD2059, KTD2060, KTD2061