KTD1352 Datasheet, Equivalent, Cross Reference Search
Type Designator: KTD1352
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Emitter Voltage |Vce|: 80 V
Maximum Collector Current |Ic max|: 4 A
Max. Operating Junction Temperature (Tj): 175 °C
Forward Current Transfer Ratio (hFE), MIN: 40
Noise Figure, dB: -
Package: TO220
KTD1352 Transistor Equivalent Substitute - Cross-Reference Search
KTD1352 Datasheet (PDF)
ktd1304.pdf
KTD1304 0.3 A, 25 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES High emitter-base voltage: VEBO=12V(Min) low on resistance: Ron=0.6(max)(IB=1mA) PACKAGE DIMENSIONS SOT-23Collector3Dim Min MaxA 2.800 3.0401BaseB 1.200 1.4002EmitterC 0.890 1.110D
ktd1303.pdf
SEMICONDUCTOR KTD1303TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORAUDIO MUTING APPLICATION.FEATURESBHigh Emitter-Base Voltage : VEBO=12V(Min.).High Reverse hFE: Reverse hFE=20(Min.) (VCE=2V, IC=4mA).DIM MILLIMETERSOA 3.20 MAXLow on Resistance :RON=0.6(Typ.) (IB=1mA).HM B 4.30 MAXC 0.55 MAX_D 2.40 + 0.15E 1.27F 2.30C_+G 14.00 0.50H 0.60 MAX
ktd1302.pdf
SEMICONDUCTOR KTD1302TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORAUDIO MUTING APPLICATION.B CFEATURES High Emitter-Base Voltage : VEBO=12V(Min.). High Reverse hFE: Reverse hFE=20(Min.) (VCE=2V, IC=4mA).N DIM MILLIMETERS Low on Resistance :RON=0.6 (Typ.) (IB=1mA).A 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85MAXIMUM RATING (Ta=25 )H 0.45
ktd1304.pdf
SEMICONDUCTOR KTD1304TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORAUDIO MUTING APPLICATION.FEATURESEL B LHigh Emitter-Base Voltage : VEBO=12V(Min.).DIM MILLIMETERSHigh Reverse hFE_+A 2.93 0.20B 1.30+0.20/-0.15: Reverse hFE=20(Min.) (VCE=2V, IC=4mA).C 1.30 MAX23 D 0.40+0.15/-0.05Low on Resistance : RON=0.6(Max.) (IB=1mA).E 2.40+0.30/-0.201G 1.90
ktd1347.pdf
SEMICONDUCTOR KTD1347TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVOLTAGE REGULATORS, RELAY DRIVERS LAMP DRIVERS, ELECTRICAL EQUIPMENTB DFEATURES Adoption of MBIT processes.DIM MILLIMETERSP Low collector-to-emitter saturation voltage.DEPTH:0.2A 7.20 MAX Fast switching speed. B 5.20 MAXCC 0.60 MAXS Large current capacity and wide ASO.D 2.50 MAXQE 1.15 MAX
ktd1302.pdf
KTD1302TRANSISTOR (NPN) SOT-89-3L FEATURES 1. BASE Small Flat Package Audio Muting Application 2. COLLECTOR High Emitter-Base Voltage 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 12 V IC Collector Current 300 mA PC Collector
ktd1304.pdf
KTD1304SOT-23 TRANSISTOR (NPN) FEATURES High emitter-base voltage 1. BASE low on resistance 2. EMITTER 3.COLLECTOR MARKING: MAX MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 12 V IC Collector Current -Continuous 0.3 A PC Collector
ktd1304.pdf
KTD1304 SOT-23 Transistor(NPN)SOT-231. BASE 2. EMITTER 3.COLLECTOR Features High emitter-base voltage:VEBO=12V(Min) low on resistance:Ron=0.6(max)(IB=1mA) MARKING: MAX Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 20 V VEBO Emit
ktd1304.pdf
KTD1304NPN EPITAXIAL PLANAR TRANSISTORP b Lead(Pb)-Free312SOT-23ABSOLUTE MAXIMUM RATINGS(TaRating Symbol Value UnitVCBO25 VCollector-Base VoltageVCEO20 VCollector-Emitter VoltageVVEBO 12Emitter-Base VoltageICCollector Current-Continuous 0.3 APC0.2 WCollector Power DisspationJunction Temperature TJ 150 C-55 - 150Storage Temperature Tstg CWE
ktd1304s.pdf
SMD Type TransistorsNPN TransistorsKTD1304 (KTD1304S)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.13 Features High Emitter-Base Voltage :VEBO = 12V(Min) High Reverse hFE1 2+0.02+0.1 Low on Resistance 0.15 -0.020.95 -0.1+0.11.9-0.21. Base2. Emitter3. Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector -
ktd1302.pdf
SMD Type TransistorsNPN TransistorsKTD13021.70 0.1 Features Small Flat Package Audio Muting Application0.42 0.10.46 0.1 High Emitter-Base Voltage1.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 25 Collector - Emitter Voltage VCEO 20 V Emitter - Base Voltage VEBO 12 Colle
ktd1304.pdf
SMD Type TransistorsNPN TransistorsKTD1304 (KTD1304S)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.1 Features3 High Emitter-Base Voltage :VEBO = 12V(Min) High Reverse hFE Low on Resistance1 2+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Vo
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , BC327 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .