KTD2059 Datasheet. Equivalente

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 ktd2059.pdf

SEMICONDUCTOR KTD2059 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A C FEATURES DIM MILLIMETERS S Complementary to KTB1367. _ A 10.0 0.3 + _ + B 15.0 0.3 E C _ 2.70 0.3 + D 0.76+0.09/-0.05 _ E 3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.3 G + MAXIMUM RATING (Ta=25 ) H 0.5+0.1/-0.05 _ + J 13.6 0.5 L L CHARACTERISTIC SYMBOL RATING UNIT R

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 ktd2059.pdf

isc Silicon NPN Power Transistor KTD2059 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 100V(Min) (BR)CEO Collector Power Dissipation- P = 30W@ T = 25 C C Low Collector Saturation Voltage- V = 2.0V(Max)@ (I = 4A, I = 0.4A) CE(sat) C B Complement to Type KTB1367 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

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 ktd2058.pdf

SEMICONDUCTOR KTD2058 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A C FEATURES DIM MILLIMETERS S Low Saturation Voltage _ A 10.0 0.3 + _ + B 15.0 0.3 E VCE(sat)=1.0V(Max.) at IC=2A, IB=0.2A. C _ 2.70 0.3 + D 0.76+0.09/-0.05 Complementary to KTB1366. _ E 3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.3 G + H 0.5+0.1/-0.05 _ + J 13.6 0.5

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KTD2058(NPN) TO-220 Transistor TO-220 1. BASE 2. COLLECTOTR 3. EMITTER 3 2 1 Features Low Collector Saturation Voltage VCE(SAT) = 1. 0V(MAX) . Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V

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 ktd2058.pdf

isc Silicon NPN Power Transistor KTD2058 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 60V(Min.) (BR)CEO Collector Power Dissipation P = 25 W@ T = 25 C C Low Collector Saturation Voltage- V = -1.0V(Max)@ (I = -2A, I = -0.2A) CE(sat) C B Complement to Type KTB1366 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIO