Биполярный транзистор KTD2059 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: KTD2059
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 30 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V
Макcимальный постоянный ток коллектора (Ic): 5 A
Предельная температура PN-перехода (Tj): 175 °C
Статический коэффициент передачи тока (hfe): 40
Корпус транзистора: TO220F
KTD2059 Datasheet (PDF)
ktd2059.pdf
SEMICONDUCTOR KTD2059TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORGENERAL PURPOSE APPLICATION. ACFEATURESDIM MILLIMETERSSComplementary to KTB1367._A 10.0 0.3+_+B 15.0 0.3EC _2.70 0.3+D 0.76+0.09/-0.05_E 3.2 0.2+_F 3.0 0.3+_12.0 0.3G +MAXIMUM RATING (Ta=25 )H 0.5+0.1/-0.05_+J 13.6 0.5L LCHARACTERISTIC SYMBOL RATING UNITR
ktd2059.pdf
isc Silicon NPN Power Transistor KTD2059DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOCollector Power Dissipation-: P = 30W@ T = 25C CLow Collector Saturation Voltage-: V = 2.0V(Max)@ (I = 4A, I = 0.4A)CE(sat) C BComplement to Type KTB1367Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS
ktd2058.pdf
SEMICONDUCTOR KTD2058TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORGENERAL PURPOSE APPLICATION.ACFEATURESDIM MILLIMETERSSLow Saturation Voltage_A 10.0 0.3+_+B 15.0 0.3E: VCE(sat)=1.0V(Max.) at IC=2A, IB=0.2A.C _2.70 0.3+D 0.76+0.09/-0.05Complementary to KTB1366._E 3.2 0.2+_F 3.0 0.3+_12.0 0.3G +H 0.5+0.1/-0.05_+J 13.6 0.5
ktd2058.pdf
KTD2058(NPN) TO-220 TransistorTO-2201. BASE 2. COLLECTOTR 3. EMITTER 3 21Features Low Collector Saturation Voltage : VCE(SAT) = 1. 0V(MAX) . Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V
ktd2058.pdf
isc Silicon NPN Power Transistor KTD2058DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min.)(BR)CEOCollector Power Dissipation: P = 25 W@ T = 25C CLow Collector Saturation Voltage-: V = -1.0V(Max)@ (I = -2A, I = -0.2A)CE(sat) C BComplement to Type KTB1366Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIO
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050