SEMICONDUCTOR KTD2059TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORGENERAL PURPOSE APPLICATION. ACFEATURESDIM MILLIMETERSSComplementary to KTB1367._A 10.0 0.3+_+B 15.0 0.3EC _2.70 0.3+D 0.76+0.09/-0.05_E 3.2 0.2+_F 3.0 0.3+_12.0 0.3G +MAXIMUM RATING (Ta=25 )H 0.5+0.1/-0.05_+J 13.6 0.5L LCHARACTERISTIC SYMBOL RATING UNITR

isc Silicon NPN Power Transistor KTD2059DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOCollector Power Dissipation-: P = 30W@ T = 25C CLow Collector Saturation Voltage-: V = 2.0V(Max)@ (I = 4A, I = 0.4A)CE(sat) C BComplement to Type KTB1367Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS

SEMICONDUCTOR KTD2058TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORGENERAL PURPOSE APPLICATION.ACFEATURESDIM MILLIMETERSSLow Saturation Voltage_A 10.0 0.3+_+B 15.0 0.3E: VCE(sat)=1.0V(Max.) at IC=2A, IB=0.2A.C _2.70 0.3+D 0.76+0.09/-0.05Complementary to KTB1366._E 3.2 0.2+_F 3.0 0.3+_12.0 0.3G +H 0.5+0.1/-0.05_+J 13.6 0.5

KTD2058(NPN) TO-220 TransistorTO-2201. BASE 2. COLLECTOTR 3. EMITTER 3 21Features Low Collector Saturation Voltage : VCE(SAT) = 1. 0V(MAX) . Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V

isc Silicon NPN Power Transistor KTD2058DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min.)(BR)CEOCollector Power Dissipation: P = 25 W@ T = 25C CLow Collector Saturation Voltage-: V = -1.0V(Max)@ (I = -2A, I = -0.2A)CE(sat) C BComplement to Type KTB1366Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIO