KTN2222S . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: KTN2222S
   Código: ZB
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.35 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 30 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 0.6 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 300 MHz
   Capacitancia de salida (Cc): 8 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT23

Búsqueda de reemplazo de transistor bipolar KTN2222S

KTN2222S Datasheet (PDF)

..1. Size:411K kec
ktn2222s as.pdf

SEMICONDUCTOR KTN2222S/ASTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EL B LFEATURES DIM MILLIMETERSLow Leakage Current _+2.93 0.20AB 1.30+0.20/-0.15: ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V.C 1.30 MAX2Low Saturation Voltage 3 D 0.45+0.15/-0.05E 2.40+0.30/-0.20: VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA.1G

..2. Size:53K kec
ktn2222s ktn2222as.pdf

SEMICONDUCTOR KTN2222S/ASTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EL B LFEATURES DIM MILLIMETERS_+A 2.93 0.20Low Leakage Current B 1.30+0.20/-0.15: ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V. C 1.30 MAX23 D 0.40+0.15/-0.05Low Saturation Voltage E 2.40+0.30/-0.201G 1.90: VCE(sat)=0.3V(Max.) ; IC=150mA,

7.1. Size:405K kec
ktn2222 a.pdf

SEMICONDUCTOR KTN2222/ATECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B CFEATURES Low Leakage Current : ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V.N DIM MILLIMETERSLow Saturation Voltage A 4.70 MAXEKB 4.80 MAX: VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA. GC 3.70 MAXDComplementary to the KTN2907/2907A.D 0.45E 1.00K

7.2. Size:44K kec
ktn2222ae.pdf

SEMICONDUCTOR KTN2222AETECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EFEATURES BLow Leakage Current DDIM MILLIMETERS: ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V.2_+A 1.60 0.10Low Saturation Voltage _+B 0.85 0.1031_C 0.70 0.10+: VCE(sat)=0.3V(Max.) ; IC=150mA, IB=15mA.D 0.27+0.10/-0.05_Complementary

7.3. Size:49K kec
ktn2222u au.pdf

SEMICONDUCTOR KTN2222U/AUTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EFEATURES M B MDIM MILLIMETERSLow Leakage Current _A+2.00 0.20D2: ICEX=10nA(Max.) ; VCE=60V, VEB(OFF)=3V. _+B 1.25 0.15_+C 0.90 0.10Low Saturation Voltage 31D 0.3+0.10/-0.05_E +2.10 0.20: VCE(sat)=0.3V(Max.) ; IC=150

Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , A1015 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

History: IT136

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: GN1A3Q | D965-KEHE | 2SD662B | 2SD661A | 2SC3080 | S9018L | S9012J | 2SA73L | 2SA73H | 2SA1015H | WT955 | TS13005CK | TP5001P3 | SS8550W-L | SS8550W-J | SS8550W-H | SS8550E | SS8550D | SS8550C | SS8050E | SS8050D