KTN2907AS . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: KTN2907AS
   Código: ZD_ZH
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.35 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.6 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 200 MHz
   Capacitancia de salida (Cc): 8 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT23

Búsqueda de reemplazo de transistor bipolar KTN2907AS

KTN2907AS Datasheet (PDF)

..1. Size:704K kec
ktn2907s ktn2907as.pdf

SEMICONDUCTOR KTN2907S/ASTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EL B LFEATURESDIM MILLIMETERS_Low Leakage Current A 2.93 0.20+B 1.30+0.20/-0.15: ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V.C 1.30 MAX23 D 0.40+0.15/-0.05Low Saturation Voltage E 2.40+0.30/-0.201: VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15m

6.1. Size:83K kec
ktn2907ae.pdf

SEMICONDUCTOR KTN2907AETECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EFEATURESBLow Leakage CurrentDDIM MILLIMETERS: ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V.2_+A 1.60 0.10Low Saturation Voltage _+B 0.85 0.1031_C 0.70 0.10+: VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA.D 0.27+0.10/-0.05_Complementar

6.2. Size:50K kec
ktn2907u ktn2907au.pdf

SEMICONDUCTOR KTN2907U/AUTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EFEATURESM B MDIM MILLIMETERSLow Leakage Current_+A 2.00 0.20D2: ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V._+B 1.25 0.15_+C 0.90 0.10Low Saturation Voltage 31D 0.3+0.10/-0.05_+: VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA.

7.1. Size:577K kec
ktn2907s as.pdf

SEMICONDUCTOR KTN2907S/ASTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EFEATURES L B LDIM MILLIMETERSLow Leakage Current_+2.93 0.20AB 1.30+0.20/-0.15: ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V.C 1.30 MAX2Low Saturation Voltage 3 D 0.45+0.15/-0.05E 2.40+0.30/-0.20: VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA.

7.2. Size:379K kec
ktn2907 a.pdf

SEMICONDUCTOR KTN2907/ATECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B CFEATURESLow Leakage Current: ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V.N DIM MILLIMETERSLow Saturation Voltage A 4.70 MAXEK: VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA. B 4.80 MAXGC 3.70 MAXDComplementary to the KTN2222/2222A.D 0.45E 1.00

7.3. Size:43K kec
ktn2907u au.pdf

SEMICONDUCTOR KTN2907U/AUTECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.EFEATURESM B MDIM MILLIMETERSLow Leakage Current_A+2.00 0.20D2: ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V._+B 1.25 0.15_+C 0.90 0.10Low Saturation Voltage 31D 0.3+0.10/-0.05_E +: VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: RT3NSSM | 2N1970

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