KTN2907AS - аналоги, параметры транзистора - Справочник транзисторов

KTN2907AS - технические параметры

..1. Size:704K kec
ktn2907s ktn2907as.pdf pdf_icon

SEMICONDUCTOR KTN2907S/AS TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L FEATURES DIM MILLIMETERS _ Low Leakage Current A 2.93 0.20 + B 1.30+0.20/-0.15 ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V. C 1.30 MAX 2 3 D 0.40+0.15/-0.05 Low Saturation Voltage E 2.40+0.30/-0.20 1 VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15m

6.1. Size:83K kec
ktn2907ae.pdf pdf_icon

SEMICONDUCTOR KTN2907AE TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B Low Leakage Current D DIM MILLIMETERS ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V. 2 _ + A 1.60 0.10 Low Saturation Voltage _ + B 0.85 0.10 3 1 _ C 0.70 0.10 + VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA. D 0.27+0.10/-0.05 _ Complementar

6.2. Size:50K kec
ktn2907u ktn2907au.pdf pdf_icon

SEMICONDUCTOR KTN2907U/AU TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES M B M DIM MILLIMETERS Low Leakage Current _ + A 2.00 0.20 D 2 ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V. _ + B 1.25 0.15 _ + C 0.90 0.10 Low Saturation Voltage 3 1 D 0.3+0.10/-0.05 _ + VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA.

7.1. Size:577K kec
ktn2907s as.pdf pdf_icon

SEMICONDUCTOR KTN2907S/AS TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES L B L DIM MILLIMETERS Low Leakage Current _ + 2.93 0.20 A B 1.30+0.20/-0.15 ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V. C 1.30 MAX 2 Low Saturation Voltage 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA.