MA2 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

July 2014FDFMA2P857Integrated P-Channel PowerTrench MOSFET and Schottky Diode 20V, 3.0A, 120mFeatures General DescriptionThis device is designed specifically as a single package solution MOSFET:for the battery charge switch in cellular handset and other ultra- Max rDS(on) = 120m at VGS = 4.5V, ID = 3.0Aportable applications. It features a MOSFET with low on-s

December 2008FDFMA2P853TtmIntegrated P-Channel PowerTrench MOSFET and Schottky Diode 20 V, 3.0 A, 120 mFeatures General DescriptionThis device is designed specifically as a single package solution MOSFET:for the battery charge switch in cellular handset and other Max rDS(on) = 120 m at VGS = 4.5 V, ID = 3.0 Aultra-portable applications. It features a MOS

April 2009tmFDMA291PSingle P-Channel 1.8V Specified PowerTrench MOSFETGeneral Description FeaturesThis device is designed specifically for battery charge 6.6 A, 20V. rDS(ON) = 42 m @ VGS = 4.5V or load switching in cellular handset and other ultra- rDS(ON) = 58 m @ VGS = 2.5V portable applications. It features a MOSFET with low rDS(ON) = 98 m @ VGS =

July 2014FDFMA2P029ZIntegrated P-Channel PowerTrench MOSFET and Schottky Diode20V, 3.1A, 95m Features General DescriptionMOSFET This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra- Max rDS(on) = 95m at VGS = 4.5V, ID = 3.1Aportable applications. It features a MOSFET with very low on-

May 20 0ttmtmtmFDMA2002NZDual N-Channel PowerTrench MOSFETGeneral Description Features 2.9 A, 30 V RDS(ON) = 123 m @ VGS = 4.5 V This device is designed specifically as a single package RDS(ON) = 140 m @ VGS = 3.0 V solution for dual switching requirements in cellular RDS(ON) = 163 m @ VGS = 2.5 V handset and other ultra-portable applications. It fea

July 2009FDFMA2P859TIntegrated P-Channel PowerTrench MOSFET and Schottky Diode 20 V, 3.0 A, 120 m Features General DescriptionThis device is designed specifically as a single package solution MOSFET:for the battery charge switch in cellular handset and other Max rDS(on) = 120 m at VGS = 4.5 V, ID = 3.0 Aultra-portable applications. It features a MOSFET with low

September 2008July 2014FDFMA2P853Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description FeaturesThis device is designed specifically as a single package MOSFET:solution for the battery charge switch in cellular handset -3.0 A, -20V. RDS(ON) = 120 m @ VGS = -4.5 V and other ultra-portable applications. It features a MOSFET with low on-state resis

July 2014FDFMA2N028ZIntegrated N-Channel PowerTrench MOSFET and Schottky Diode 20V, 3.7A, 68mFeatures General DescriptionMOSFET This device is designed specifically as a single package solution for a boost topology in cellular handset and other ultra-portable Max rDS(on) = 68m at VGS = 4.5V, ID = 3.7Aapplications. It features a MOSFET with low on-state resistance, Max

TransistorsEmitter common(dual digital transistors)UMA2N / FMA2AFFeatures FExternal dimensions (Units:mm)1) Two DTA144E transistors in asingle UMT and a SMT package.2) Mounting cost and area can be cutin half.FStructureDual PNP digital transistor (each withtwo built in resistors)The following characteristics apply toboth DTr1 and DTr2.FAbsolute maximum ratings (Ta =

EMA2 / UMA2N / FMA2A Transistors Emitter common (dual digital transistors) EMA2 / UMA2N / FMA2A Features External dimensions (Unit : mm) 1) Two DTA144E transistors in a EMT or UMT or SMT package. EMA22) Mounting cost and area can be cut in half. (4) (3)(2)(5) (1)1.21.6 Structure Dual PNP silicon transistor (each with two built in resistors) Each lead has same

QH8MA2Datasheet30V Nch+Pch Power MOSFETlOutlinel TSMT8Symbol Tr1:Nch Tr2:PchVDSS 30V -30V RDS(on)(Max.) 35m 80m ID 4.5A 3A PD 1.5W lFeaturesllInner circuitl1) Low on - resistance.2) Small Surface Mount Package (TSMT8).3) Pb-free lead plati

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

This product complies with the RoHS Directive (EU 2002/95/EC).DMA26104Silicon PNP epitaxial planar typeFor digital circuits Features Package Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package Mini5-G3-B Pin Name Basic Part Number 1: Base (Tr1) 4: Collector (Tr2) Dual DRA2114Y (Common emitter

This product complies with the RoHS Directive (EU 2002/95/EC).DMA20601Silicon PNP epitaxial planar typeFor general amplification Features Package Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package Mini6-G4-B Pin Name Basic Part Number 1: Emitter (Tr1) 4: Collector (Tr2) Dual DSA2001 (Individ

This product complies with the RoHS Directive (EU 2002/95/EC).DMA20201Silicon PNP epitaxial planar typeFor general amplification Features Package Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package Mini5-G3-B Pin Name Basic Part Number 1: Emitter (Tr1) 4: Collector (Tr2) Dual DSA2001 (Common

This product complies with the RoHS Directive (EU 2002/95/EC).DMA20402Silicon PNP epitaxial planar typeFor general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Contributes to miniaturization of sets, reduction of component count. Mini6-G4-B Eco-friendly Halogen-free package Pin Name 1: Emitter (

This product complies with the RoHS Directive (EU 2002/95/EC).DMA20403Silicon PNP epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For general amplification Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini6-G4-B Contributes to miniaturization of s

This product complies with the RoHS Directive (EU 2002/95/EC).DMA26406Silicon PNP epitaxial planar typeFor digital circuits Features Package Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package Mini6-G4-B Pin Name Basic Part Number 1: Emitter (Tr1) 4: Emitter (Tr2)Dual DRA2143T (Individual)

This product complies with the RoHS Directive (EU 2002/95/EC).DMA20401Silicon PNP epitaxial planar typeFor general amplification Features Package Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package Mini6-G4-B Pin Name Basic Part Number 1: Emitter (Tr1) 4: Emitter (Tr2)Dual DSA2001 (Individual

This product complies with the RoHS Directive (EU 2002/95/EC).DMA26102Silicon PNP epitaxial planar typeFor digital circuits Features Package Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package Mini5-G3-B Pin Name Basic Part Number 1: Base (Tr1) 4: Collector (Tr2) Dual DRA2124E (Common emitter

This product complies with the RoHS Directive (EU 2002/95/EC).DMA2610FSilicon PNP epitaxial planar typeFor digital circuits Features Package Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package Mini5-G3-B Pin Name Basic Part Number 1: Base (Tr1) 4: Collector (Tr2) Dual DRA2143X (Common emitter

This product complies with the RoHS Directive (EU 2002/95/EC).DMA2610MSilicon PNP epitaxial planar typeFor digital circuits Features Package Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package Mini5-G3-B Pin Name Basic Part Number 1: Base (Tr1) 4: Collector (Tr2) Dual DRA2123J (Common emitter

This product complies with the RoHS Directive (EU 2002/95/EC).DMA2610HSilicon PNP epitaxial planar typeFor digital circuits Features Package Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package Mini5-G3-B Pin Name Basic Part Number 1: Base (Tr1) 4: Collector (Tr2) Dual DRA2123Y (Common emitter

This product complies with the RoHS Directive (EU 2002/95/EC).DMA26100Silicon PNP epitaxial planar typeFor digital circuits Features Package Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package Mini5-G3-B Pin Name Basic Part Number 1: Base (Tr1) 4: Collector (Tr2) Dual DRA2144T (Common emitter

This product complies with the RoHS Directive (EU 2002/95/EC).DMA26403Silicon PNP epitaxial planar typeFor digital circuits Features Package Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package Mini6-G4-B Pin Name Basic Part Number 1: Emitter (Tr1) 4: Emitter (Tr2)Dual DRA2144E (Individual)

This product complies with the RoHS Directive (EU 2002/95/EC).DMA26109Silicon PNP epitaxial planar typeFor digital circuits Features Package Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package Mini5-G3-B Pin Name Basic Part Number 1: Base (Tr1) 4: Collector (Tr2) Dual DRA2113Z (Common emitter

This product complies with the RoHS Directive (EU 2002/95/EC).DMA26401Silicon PNP epitaxial planar typeFor digital circuits Features Package Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package Mini6-G4-B Pin Name Basic Part Number 1: Emitter (Tr1) 4: Emitter (Tr2)Dual DRA2114E (Individual)

This product complies with the RoHS Directive (EU 2002/95/EC).DMA26402Silicon PNP epitaxial planar typeFor digital circuits Features Package Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package Mini6-G4-B Pin Name Basic Part Number 1: Emitter (Tr1) 4: Emitter (Tr2)Dual DRA2124E (Individual)

This product complies with the RoHS Directive (EU 2002/95/EC).DMA20101Silicon PNP epitaxial planar typeFor general amplification Features Package Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package Mini5-G3-B Pin Name Basic Part Number 1: Base (Tr1) 4: Collector (Tr2) Dual DSA2001 (Common emit

This product complies with the RoHS Directive (EU 2002/95/EC).DMA26405Silicon PNP epitaxial planar typeFor digital circuits Features Package Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package Mini6-G4-B Pin Name Basic Part Number 1: Emitter (Tr1) 4: Emitter (Tr2)Dual DRA2114T (Individual)

This product complies with the RoHS Directive (EU 2002/95/EC).DMA26603Silicon PNP epitaxial planar typeFor digital circuits Features Package Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package Mini6-G4-B Pin Name Basic Part Number 1: Emitter (Tr1) 4: Collector (Tr2) Dual DRA2144E (Individual)

This product complies with the RoHS Directive (EU 2002/95/EC).DMA206E1Silicon PNP epitaxial planar typeFor high-frequency amplification Features Package High transition frequency fT Code Contributes to miniaturization of sets, reduction of component count. Mini6-G4-B Eco-friendly Halogen-free package Pin Name 1: Emitter (Tr1) 4: Collector (Tr2)

This product complies with the RoHS Directive (EU 2002/95/EC).DMA26106Silicon PNP epitaxial planar typeFor digital circuits Features Package Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package Mini5-G3-B Pin Name Basic Part Number 1: Base (Tr1) 4: Collector (Tr2) Dual DRA2143T (Common emitter

This product complies with the RoHS Directive (EU 2002/95/EC).DMA26105Silicon PNP epitaxial planar typeFor digital circuits Features Package Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package Mini5-G3-B Pin Name Basic Part Number 1: Base (Tr1) 4: Collector (Tr2) Dual DRA2114T (Common emitter

This product complies with the RoHS Directive (EU 2002/95/EC).DMA204A0Silicon PNP epitaxial planar typeFor low frequency amplification Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini6-G4-B Eco-friendly Halogen-free package Pin Name 1: Emitter (Tr1) 4: E

This product complies with the RoHS Directive (EU 2002/95/EC).DMA26101Silicon PNP epitaxial planar typeFor digital circuits Features Package Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package Mini5-G3-B Pin Name Basic Part Number 1: Base (Tr1) 4: Collector (Tr2) Dual DRA2114E (Common emitter

This product complies with the RoHS Directive (EU 2002/95/EC).DMA26103Silicon PNP epitaxial planar typeFor digital circuits Features Package Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package Mini5-G3-B Pin Name Basic Part Number 1: Base (Tr1) 4: Collector (Tr2) Dual DRA2144E (Common emitter

SEMICONDUCTOR KMA2D8P20XTECHNICAL DATA P-CH Trench MOSFETGeneral DescriptionIts mainly suitable for battery pack or power management in cell phone,and PDA.DHFEATURES JVDSS=-20V, ID=-2.8A.EDrain-Source ON Resistance.DIM MILLIMETERS: RDS(ON)=90m(Max.) @ VGS=-4.5VA_3.00 0.15A +F: RDS(ON)=150m(Max.) @ VGS=-2.5V _1.65 0.1+B_+2.85 0.2C

SEMICONDUCTOR KMA2D7DP20XTECHNICAL DATA Dual P-CH Trench MOSFETGeneral DescriptionIts mainly suitable for use as a load switch in battery powered applications.AGFEATURES 6 4 CVDSS=-20V, ID=-2.7A.FB1 B F1Drain-Source ON Resistance.1 3: RDS(ON)=100m (Max.) @ VGS=-4.5V.DIM MILLIMETERS: RDS(ON)=175m (Max.) @ VGS=-2.5V._3.05 + 0.1AE_2.85 + 0.15B_1

SEMICONDUCTOR KMA2D0DP20XTECHNICAL DATA Dual P-CH Trench MOSFETGeneral DescriptionIts mainly suitable for use as a load switch in battery powered applications.AF6 4 CB1 B EFEATURES 1 3VDSS=-20V, ID=-2.0A.DIM MILLIMETERSDrain-Source ON Resistance._2.926 + 0.05AG: RDS(ON)=130m (Max.) @ VGS=-4.5V. _B 2.80 + 0.15_B1 1.626 + 0.05: RDS(ON)=190m (Max.) @

SEMICONDUCTOR KMA2D4P20SATECHNICAL DATA P-Ch Trench MOSFETGeneral DescriptionIts mainly suitable for use as a load switch in battery powered applications.EFEATURES BVDSS=-20V, ID=-2.4A. DIM MILLIMETERS_A 2.926 0.05+Drain-Source ON Resistance._B 1.626 0.05+C 1.25 MAX: RDS(ON)=100m (Max.) @ VGS=-4.5V.23 _D0.40 + 0.05_E2.80 + 0.15: RDS(ON)=175m (M

AMA2N7002 AiT Semiconductor Inc. www.ait-ic.com MOSFET 30V, 154mA, SINGLE, N-CHANNEL, GATE ESD PROTECTION DESCRIPTION FEATURES The AMA2N7002 is available in SC-89 package. Low Gate Charge for Fast Switching Small 1.6 X 1.6 mm Footprint ESD Protected Gate ORDERING INFORMATION ESD Protected: 2000V S- Prefix for Automotive and Other Applications Requirin

CHENMKO ENTERPRISE CO.,LTDCHFMA2GPSURFACE MOUNT Dual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 30 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-74A)SC-74A* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capability

CHENMKO ENTERPRISE CO.,LTDCHEMA2GPSURFACE MOUNT Dual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 30 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-553)SOT553* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.(4) (3)* High saturation current

CHENMKO ENTERPRISE CO.,LTDCHUMA2GPSURFACE MOUNT Dual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 30 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-88A/SOT-353)SC-88A/SOT353* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation cur

TMA20N65H, TMP20N65H Wuxi Unigroup Microelectronics Company 650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TMA20N65H TO-220F A2

TMA2N60H,TMD2N60H,TMT2N60H,TMU2N60H Wuxi Unigroup Microelectronics CompanyWuxi Unigroup Microelectronics Company 600V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Info

TMA20N65HG,TMW20N65HG Wuxi Unigroup Microelectronics Co.,Ltd 650V N-Channel MOSFET Description 650V N-Channel MOSFET VDMOSFET is a double-diffusion device which the current flows is vertically, and is a voltage-controlled device. Under the control of the appropriate gate voltage, the semiconductor surface is inverted, forming a conductive channel and an appropriate amount of curre