MD6002F Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MD6002F  📄📄 

Material: Si

Polaridad de transistor: NPN*PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.4 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 30 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 170 MHz

Capacitancia de salida (Cc): 5.6 pF

Ganancia de corriente contínua (hFE): 100

Encapsulados: TO89

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MD6002F datasheet

 0.1. Size:59K  crystaloncs
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MD6002F

 9.1. Size:197K  onsemi
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MD6002F

NIMD6001N, NIMD6001AN Dual N-Channel Driver with Diagnostic Output 60 V, 3 A, 110 mW NIMD6001N/AN is a dual 3 Amp low-side switch with an integrated common disable input and drain diagnostic output. Pulling http //onsemi.com the Disable pin low will override any applied gate voltages and turn off both FET switches. Should either Drain-Source voltage exceed 3.0 AMPERES approximately 50

 9.2. Size:206K  onsemi
nimd6001n.pdf pdf_icon

MD6002F

NIMD6001N, NIMD6001AN Dual N-Channel Driver with Diagnostic Output 60 V, 3 A, 110 mW NIMD6001N/AN is a dual 3 Amp low-side switch with an integrated common disable input and drain diagnostic output. Pulling http //onsemi.com the Disable pin low will override any applied gate voltages and turn off both FET switches. Should either Drain-Source voltage exceed 3.0 AMPERES approximately 50

 9.3. Size:1830K  willsemi
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MD6002F

WNMD6003 WNMD6003 Dual N-Channel, 60V, 0.30A, Power MOSFET Http// www.sh-willsemi.com VDS (V) Rds(on) ( ) 1.4@ VGS=10V 60 1.7@ VGS=4.5V ESD Rating 2000V HBM SOT-563 Descriptions The WNMD6003 is Dual N-Channel enhancem -ent MOS Field Effect Transistor. Uses advanced D1 G2 S2 trench technology and design to provide excellent 6 5 4 RDS (ON) with low gate charge. This d

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